NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.
1 - 27 . (canceled)
28 . A nitride-based semiconductor device comprising:
a substrate consisting of an n-type nitride-based semiconductor;
nitride-based semiconductor layers including an n-type layer, an active layer and a p-type layer formed on an upper surface of said substrate;
a p-side electrode formed on said p-type layer; and
an n-side electrode formed on a back surface of said substrate, wherein
a thickness of said substrate is not more than 180 μm, and
a dislocation density of said back surface on which said n-side electrode is formed is not more than 1×10 9 cm −2 .
29 . The nitride-based semiconductor device according to claim 28 , wherein
said nitride-based semiconductor layers are formed on a Ga face of said substrate, and
said n-side electrode is formed on a nitrogen face of said substrate.
30 . The nitride-based semiconductor device according to claim 28 , wherein
said dislocation density of said back surface of said substrate is not more than 1×10 6 cm −2 .