IP Library › Patent Application 11928185
Patent Application
App. No. 11/928,185

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

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Quick Facts
Patent No.
US None
App. No.
11/928,185
Abstract

A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.

Claims (11)

1 - 27 . (canceled)

28 . A nitride-based semiconductor device comprising:

a substrate made from an n-type nitride-based semiconductor formed by using growth on a substrate for growth; and

an n-side electrode formed on a back surface of said substrate, wherein

a dislocation density is not more than 1×10 9 cm −2 in the vicinity of the interface between said substrate and said n-side electrode.

29 . The nitride based semiconductor device according to claim 28 , wherein

said substrate is thinned by processing the back surface thereof.

30 . (canceled)

31 . (canceled)

32 . (canceled)

33 . (canceled)