Electronic or optoelectronic assembly with an electromagnetic screening structure, method for manufacturing same
View Patent ↗The invention relates to an electromagnetic screening structure on or in a non-conductive carrier material in which non-conductive metal compounds are placed. The screening structure comprises a flat metal seed layer formed on or in the carrier material, which is formed through metal seeds that have been released through electromagnetic radiation, and a flat metal coating which is applied over the metal seed layer and which is in contact with said metal seed layer. The invention additionally relates to an electronic or optoelectronic used with the screening structure and a method for manufacturing the screening structure. In a further aspect of the invention, an electronic or optoelectronic assembly is provided with a carrier element, wherein at least one additional electrical or optoelectronic component is arranged on the surface of the carrier material and is in contact with conductor path structures formed on the carrier surface.
1. An electromagnetic screening structure formed on or in a non-conductive carrier for providing the carrier with electromagnetic shielding, the non-conductive carrier comprising a plastic material having non-conductive metal compounds embedded therein, the electromagnetic screening structure comprising:
a flat metal seed layer formed on or in the carrier, the flat metal seed layer comprising a plurality of broken open compounds of said non-conductive metal compounds, and wherein metal atoms of the broken open compounds are exposed such that the metal atoms act as seeds of the flat metal seed layer; and
a flat metal coating that has been applied over the flat metal seed layer and is in electrical contact with said metal seed layer, and wherein the electromagnetic screening structure is electrically coupled to a fixed reference potential.
2. The screening structure according to claim 1 , wherein the non-conductive metal compounds comprise inorganic metal compounds or metal chelate complexes.
3. The screening structure according to claim 2 , wherein the non-conductive metal compounds comprise copper complexes or palladium complexes.
4. The screening structure according to claim 1 , wherein the carrier is a moulded interconnect device.
5. The screening structure according to claim 1 , wherein the fixed reference potential is an electric reference GROUND potential.
6. The screening structure according to claim 4 , wherein the screening structure is connected with a GROUND contact of the moulded interconnect device to thereby electrically couple the electromagnetic screening structure to the fixed reference potential, and wherein the fixed reference potential is an electric reference GROUND potential.
7. The screening structure according to claim 1 , wherein the screening structure is formed on at least one outer wall of the carrier.
8. The screening structure according to claim 1 , wherein the screening structure is formed on at least one inner wall of the carrier material.
9. The screening structure according to claim 1 , wherein the metal coating comprises a plurality of metal layers.
10. An electronic or optoelectronic assembly comprising:
at least one electrical or optoelectronic component;
a carrier element for the component, wherein the carrier element comprises,
a non-conductive plastic material having non-conductive metal compounds embedded therein,
a flat metal seed layer formed on or in the carrier element, the flat metal seed layer comprising a plurality of broken open compounds of said non-conductive metal compounds, and wherein metal atoms of the broken open compounds are exposed such that the metal atoms act as seeds of the flat metal seed layer, and
a flat metal coating which is applied over the metal seed layer and which is in electrical contact with said metal coating,
and wherein the metal seed layer and the metal coating form an electromagnetic screening structure that provides the carrier element with electromagnetic shielding, and wherein the electromagnetic screening structure is electrically coupled to a fixed reference potential.
11. The assembly according to claim 10 , wherein the screening structure is realized on at least one outer wall of the carrier element.
12. The assembly according to claim 10 , wherein the screening structure is realized on at least one inner wall of the carrier element.
13. The assembly according to the claim 10 , wherein the fixed reference potential is an electric reference GROUND potential, and wherein the screening structure is connected with a GROUND contact of the carrier element to thereby electrically couple the screening structure to the fixed reference potential.
14. The assembly according to claims 10 , wherein the carrier element comprises a receptacle opening for the connection of an electrical or optical connector or an optical fibre.
15. The assembly according to claims 10 , wherein the optoelectronic component comprises an optoelectronic sending element, an optoelectronic receiving element, or an optoelectronic sending and receiving element.
16. The assembly according to claim 10 , wherein the carrier element is formed as a moulded interconnect device.
17. The assembly according to claim 10 , wherein the plastic material comprises a thermoplastic or thermosetting plastic.