Modification of selectivity for sensing for nanostructure sensing device arrays
View Patent ↗An electronic system for selectively detecting and identifying a plurality of chemical species, which comprises an array of nanostructure sensing devices, is disclosed. Within the array, there are at least two different selectivities for sensing among the nanostructure sensing devices. Methods for fabricating the electronic system are also disclosed. The methods involve modifying nanostructures within the devices to have different selectivity for sensing chemical species. Modification can involve chemical, electrochemical, and self-limiting point defect reactions. Reactants for these reactions can be supplied using a bath method or a chemical jet method. Methods for using the arrays of nanostructure sensing devices to detect and identify a plurality of chemical species are also provided. The methods involve comparing signals from nanostructure sensing devices that have not been exposed to the chemical species of interest with signals from nanostructure sensing devices that have been exposed to the chemical species of interest.
1. An electronic system for selectively detecting and identifying a plurality of chemical species, comprising an array of nanostructure sensing devices, each nanostructure sensing device comprising at least one nanostructure and having a selectivity for sensing the chemical species, wherein the selectivity of the at least one nanostructure sensing device differs from the selectivity of at least one other nanostructure sensing device, further comprising, in each nanostructure sensing device in the array of nanostructure sensing devices, a contact electrode, and a counter electrode, electrically isolated from the contact electrode.
2. The electronic system of claim 1 , wherein the contact electrode is electrically connected to the at least one nanostructure.
3. The electronic system of claim 1 , wherein the contact electrode comprises a material selected from the group consisting of aluminum, copper, titanium and tungsten.
4. The electronic system of claim 1 , further comprising a protective coating on the contact electrode.
5. The electronic system of claim 4 wherein the protective coating is selected from the group consisting of silicon oxides, metal oxides, polymer films, and nonvolatile organics.
6. The electronic system of claim 1 , further comprising a gate electrode in at least a portion of the nanostructure sensing devices in the array of nanostructure sensing devices.
7. The electronic system of claim 1 , further comprising a pseudo-reference electrode, electrically isolated from the contact electrode, in at least a portion of the nanostructure sensing devices in the array of nanostructure sensing devices.
8. The electronic system of claim 1 , wherein the nanostructure sensing devices comprise at least one nanostructure selected from the group consisting of single-walled nanotubes, multi-walled nanotubes, nanofibers, nanowires, nanocoils, nanospheres, nanocages, nanococoons, nanohorns, nanoropes, nanotori, nanorods, nanoplatelets, and other extended molecules such as polymers, dendrimers, organometallics, fullerene-like molecules, and combinations thereof.
9. The electronic system of claim 1 , wherein the nanostructure sensing devices comprise at least one nanostructure comprising an approximately linear form.
10. The electronic system of claim 1 , wherein the nanostructure sensing devices comprising at least one nanostructure comprises elements selected from the group consisting of boron, carbon, combinations thereof, and combinations with nitrogen.
11. The electronic system of claim 1 , further comprising at least two nanostructure sensing devices having the same selectivity for sensing, wherein at least one of the at least two nanostructure sensing devices is impermeably shielded from at least the plurality of chemical species, and at least one of the at least two nanostructure sensing devices is at least partially exposed to at least the plurality of chemical species.
12. The electronic system of claim 1 , wherein the counter electrode is configured to at least in part modify the selectivity of the nanostructure sensing device.