Simultaneous unipolar multispectral integrated technology (SUMIT) detectors

1. A multi-color photo detector comprising:

a first photodiode having a first p-type layer and a first n-type layer, the first photodiode generates charge when illuminated with light photons of a first wavelength range;

a second photodiode having a second p-type layer and a second n-type layer, the second photodiode generates charge when illuminated with light photons of a second wavelength range;

a barrier layer separating the first photodiode from the second photodiode to prevent spectral cross-talk; and

a readout integrated circuit electrically coupled to the first p-type layer of the first photodiode via a first metal interconnect and electrically coupled to the second p-type layer of the second photodiode via a second metal interconnect, the second metal interconnect traverses through the first photodiode and the barrier layer to contact the second p-type layer of the second photodiode, the second metal interconnect is separated from the first photodiode and the barrier layer by a first passivating insulator, and wherein the second metal interconnect traverses through the second n-type layer and the second p-type layer of the second photodiode, the first passivating insulator separates the second metal interconnect from the second n-type layer and the second p-type layer of the second photodiode, the second metal interconnect extends beyond the second p-type layer and contacts an exposed surface of the second p-type layer.

2. The multi-color photo detector of claim 1 , wherein the first p-type layer and the second p-type layer are reticulated along their respective edges.

3. The multi-color photo detector of claim 1 , wherein the first passivating insulator covers an exposed surface of the first p-type layer.

4. The multi-color photo detector of claim 1 further comprising a second passivating insulator for covering an exposed surface of the second p-type layer.

5. The multi-color photo detector of claim 1 , wherein the second metal interconnect traverses through the second n-type layer of the second photodiode, the first passivating insulator separating the second metal interconnect from the second n-type layer of the second photodiode.

6. The multi-color photo detector of claim 1 further comprising a third metal interconnect that electrically couples the second metal interconnect to the second p-layer.

7. The multi-color photo detector of claim 1 further comprising:

a third photodiode having a third n-type layer, the third photodiode generates charge when illuminated with light photons of a third wavelength range;

a graded composition barrier separating the second n-type layer of the second photodiode from the third n-type layer of the third photodiode; and

a voltage bias applied to the third photodiode to control the flow of charge generated from the second and third photodiodes.

8. A multi-color photo sensor comprising:

a first photodiode having a first p-type layer and a first n-type layer, the first photodiode generates charge when illuminated with photons of a first wavelength range;

a second photodiode having a second p-type layer and a second n-type layer, the second photodiode generates charge when illuminated with photons of a second wavelength range; and

a readout integrated circuit electrically coupled to the first n-type layer of the first photodiode via a first metal interconnect and electrically coupled to the second n-type layer of the second photodiode via a second metal interconnect, the second metal interconnect traverses through the first photodiode to contact the second n-type layer of the second photodiode, the second metal interconnect is separated from the first photodiode by a first passivating insulator, and wherein the second metal interconnect traverses through the second p-type layer and the second n-type layer of the second photodiode, the first passivating insulator separates the second metal interconnect from the second p-type layer and the second n-type layer of the second photodiode, the second metal interconnect extends beyond the second n-type layer and contacts an exposed surface of the second n-type layer.

9. The multi-color photo sensor of claim 8 further comprising a barrier layer separating the first photodiode from the second photodiode to prevent spectral cross-talk, the barrier layer is selected from a group consisting of a semiconductor, an insulator and an air gap.

10. The multi-color photo sensor of claim 8 , wherein the first p-type layer and the second p-type layer are reticulated along their respective edges.

11. The multi-color photo sensor of claim 8 , wherein the first passivating insulator covers an exposed surface of the first p-type layer.

12. The multi-color photo sensor of claim 8 further comprising a second passivating insulator for covering an exposed surface of the second p-type layer.

13. The multi-color photo sensor of claim 8 , wherein the second metal interconnect traverses through the second p-type layer of the second photodiode, the first passivating insulator separating the second metal interconnect from the second p-type layer of the second photodiode.

14. The multi-color photo sensor of claim 8 further comprising a third metal interconnect that electrically couples the second metal interconnect to the second p-layer.

15. The multi-color photo sensor of claim 8 further comprising:

a third photodiode having a third n-type layer, the third photodiode generates charge when illuminated with photons of a third wavelength range;

a graded composition barrier separating the second n-type layer of the second photodiode from the third n-type layer of the third photodiode; and

a voltage bias applied to the third photodiode to control the flow of charge generated from the second and third photodiodes.