Backscatter sensor
View Patent ↗A micro mechanical backscatter sensor includes a receiver for receiving a modulated electromagnetic signal, a capacitive element operatively connected to the receiver, the capacitive element being arranged such that a voltage is generated across the capacitor in response to the frequency of the received signal, and a resonator operatively connected to the capacitive element such that electrostatic forces that are induced by the voltage generated cause the resonator to vibrate at a resonance frequency, the resonator being arranged such that an applied external force alters the resonance frequency of vibration. The sensor further includes a demodulator for demodulating the received signal, a modulator for modulating a carrier signal of the received signal by mixing the carrier signal with the resonance frequency of the resonator to produce a modulated electromagnetic transmission signal, and a transmitter, operatively connected to the capacitive element and arranged to transmit the modulated transmission signal.
1. A micro mechanical backscatter sensor comprising:
a receiver configured to receive a modulated electromagnetic signal;
a capacitive element operatively connected to the receiver, the capacitive element being arranged such that a voltage is generated across the capacitor in response to the frequency of the received signal;
a resonator operatively connected to the capacitive element such that electrostatic forces that are induced by the voltage generated cause the resonator to vibrate, the resonator vibrating at a resonance frequency of vibration thereof, the resonator being configured such that an external force applied thereto alters the resonance frequency of vibration thereof;
a demodulator configured to demodulate the received modulated signal;
a modulator configured to modulate a carrier signal of the received signal by mixing the carrier signal with the resonance frequency of the resonator to produce a modulated electromagnetic transmission signal; and
a transmitter operatively connected to the capacitive element and configured to transmit the modulated transmission signal.
2. The backscatter sensor according to claim 1 , further comprising:
a second capacitive element operatively connected to each of: the receiver, the transmitter and the resonator.
3. The backscatter sensor according to claim 1 , wherein the receiver and the transmitter together comprise a single antenna configured to receive and transmit signals.
4. The backscatter sensor according to claim 1 , wherein the resonator comprises a semiconductor material.
5. The backscatter sensor according to claim 1 , wherein at least one of the demodulator and the modulator is a diode.
6. The backscatter sensor according to claim 5 , wherein the diode comprises a p-n junction.
7. The backscatter sensor according to claim 1 , wherein the resonator comprises at least one mass configured to vibrate with the resonator.
8. The backscatter sensor according to claim 1 , further comprising:
a semiconductor structure; and
a substrate bonded to the semiconductor structure such that a cavity is defined therebetween, wherein the resonator is situated within the cavity.
9. The backscatter sensor according to claim 8 , wherein the cavity comprises a vacuum.