Oscillation circuit
View Patent ↗An oscillation circuit according to the present invention comprises a solid-state oscillator, an amplifier for feedback-controlling the solid-state oscillator, and ESD protecting circuits respectively connected to the input and output sides of the amplifier, wherein the ESD protecting circuit on the input side of the amplifier comprises an ESD protecting element whose constituent is a diode having a P-type diffusion layer and an N-type diffusion layer, and the ESD protecting circuit on the output side of the amplifier comprises an ESD protecting element whose constituent is an MOS transistor.
1. An oscillation circuit comprising:
a solid-state oscillator;
an amplifier for feedback-controlling the solid-state oscillator; and
ESD protecting circuits respectively connected to input and output sides of the amplifier, wherein
the ESD protecting circuit on the input side of the amplifier comprises an ESD protecting element whose constituent is a diode having a P-type diffusion layer and an N-type diffusion layer,
the ESD protecting circuit on the output side of the amplifier comprises an ESD protecting element whose constituent is a MOS transistor, and
the ESD protecting circuit on the input side of the amplifier comprises:
a power-supply-side ESD protecting element; and
a ground-side ESD protecting element, wherein
a diode in which an N-type diffusion layer is connected to a power-supply wire and a P-type diffusion layer is connected to the input side of the amplifier constitutes the power-supply-side ESD protecting element, and
a diode in which a P-type diffusion layer is connected to a ground wire and an N-type diffusion layer is connected to the input side of the amplifier constitutes the ground-side ESD protecting element.
2. The oscillation circuit as claimed in claim 1 , wherein
a MOS transistor constitutes the amplifier.
3. An oscillation circuit comprising:
a solid-state oscillator;
an amplifier for feedback-controlling the solid-state oscillator; and
ESD protecting circuits respectively connected to input and output sides of the amplifier, wherein
the ESD protecting circuit on the input side of the amplifier comprises an ESD protecting element whose constituent is a diode having a P-type diffusion layer and an N-type diffusion layer,
the ESD protecting circuit on the output side of the amplifier comprises an ESD protecting element whose constituent is a MOS transistor, and
the ESD protecting circuit on the input side of the amplifier comprises:
a resistance element;
a power-supply-side ESD protecting element; and
a ground-side ESD protecting element, wherein
the resistance element is provided on a signal wire for supplying a signal to the amplifier,
a diode in which an N-type diffusion layer is connected to a power-supply wire, a part of a P-type diffusion layer is connected to a connecting point between the amplifier and one end of the resistance element, and another part of the P-type diffusion layer is connected to the other end of the resistance element constitutes the power-supply-side ESD protecting element, and
a diode in which a P-type diffusion layer is connected to the ground wire, a part of an N-type diffusion layer is connected to the connecting point between the amplifier and one end of the resistance element, and another part of the N-type diffusion layer is connected to the other end of the resistance element constitutes the ground-side ESD protecting element.
4. The oscillation circuit as claimed in claim 3 , wherein
the diode constituting the power-supply-side ESD protecting element comprises:
a first diode in which an N-type diffusion layer is connected to the power-supply wire and a P-type diffusion layer is connected to the connecting point between the amplifier and one end of the resistance element; and
a second diode in which an N-type diffusion layer is connected to the power-supply wire and a P-type diffusion layer is connected to the other end of the resistance element, and
the diode constituting the ground-side ESD protecting element comprises:
a third diode in which a P-type diffusion layer is connected to the ground wire and an N-type diffusion layer is connected to the connecting point between the amplifier and one end of the resistance element; and
a fourth diode in which a P-type diffusion layer is connected to the ground wire and an N-type diffusion layer is connected to the other end of the resistance element.
5. The oscillation circuit as claimed in claim 3 , wherein
Polysilicon constitutes the resistance element.