Semiconductor heterostructures having reduced dislocation pile-ups and related methods
View Patent ↗Dislocation pile-ups in compositionally graded semiconductor layers are reduced or eliminated, thereby leading to increased semiconductor device yield and manufacturability. This is accomplished by introducing a semiconductor layer having a plurality of threading dislocations distributed substantially uniformly across its surface as a starting layer and/or at least one intermediate layer during growth and relaxation of the compositionally graded layer. The semiconductor layer may include a seed layer disposed proximal to the surface of the semiconductor layer and having the threading dislocations uniformly distributed therein.
1. A method for forming a semiconductor structure, the method comprising the steps of:
epitaxially growing over a substrate a relaxed graded layer comprising a III-V compound, the III-V compound comprising a group III element and a group V element; and
epitaxially growing a compositionally uniform cap layer comprising the group III element and the group V element over the relaxed graded layer,
wherein (i) a concentration of the group III element in the relaxed graded layer increases at a grading rate exceeding about 25% per micrometer, (ii) a threading dislocation density of the compositionally uniform cap layer is less than approximately 10 7 /cm 2 , and (iii) the group V element comprises phosphorous.
2. The method of claim 1 , wherein the group III element comprises indium.
3. The method of claim 1 , wherein the group III element comprises gallium.
4. The method of claim 1 , wherein the relaxed graded layer further comprises arsenic.
5. The method of claim 1 , wherein the group III element comprises indium, the relaxed graded layer further comprises arsenic, and the relaxed graded layer further comprises gallium.
6. The method of claim 1 , further comprising epitaxially growing at least one strained layer comprising a III-V compound over the compositionally uniform cap layer.
7. The method of claim 1 , further comprising:
bonding the semiconductor structure to a handle wafer; and
removing at least the substrate.
8. The method of claim 1 , wherein the compositionally uniform cap layer has a dislocation pile-up density less than approximately 1/cm.
9. The method of claim 1 , wherein the relaxed graded layer comprises at least two regions having different local grading rates.
10. The method of claim 1 , wherein the threading dislocation density of the compositionally uniform cap layer is less than approximately 5×10 5 /cm 2 .
11. A method for forming a semiconductor structure, the method comprising the steps of:
epitaxially growing over a substrate a relaxed graded layer comprising a III-V compound, the III-V compound comprising a group III element and a group V element; and
epitaxially growing a compositionally uniform cap layer comprising the group III element and the group V element over the relaxed graded layer,
wherein (i) a concentration of the group III element in the relaxed graded layer increases at a grading rate exceeding about 25% per micrometer, (ii) a threading dislocation density of the compositionally uniform cap layer is less than approximately 10 7 /cm 2 , (iii) the group III element comprises indium, (iv) the group V element comprises phosphorous, and (v) the relaxed graded layer further comprises gallium.
12. The method of claim 11 , further comprising epitaxially growing at least one strained layer comprising a III-V compound over the compositionally uniform cap layer.
13. The method of claim 11 , further comprising:
bonding the semiconductor structure to a handle wafer; and
removing at least the substrate.
14. The method of claim 11 , wherein the compositionally uniform cap layer has a dislocation pile-up density less than approximately 1/cm.
15. The method of claim 11 , wherein the relaxed graded layer comprises at least two regions having different local grading rates.
16. The method of claim 11 , wherein the threading dislocation density of the compositionally uniform cap layer is less than approximately 5×10 5 /cm 2 .