Method for manufacturing image sensor
View Patent ↗A method of manufacturing an image sensor that may restrain the oxidization of a pad. A method of manufacturing an image sensor may include at least one of the following steps: Forming a photodiode structure including a pixel in an active region of a semiconductor substrate. Forming a conductive pad electrically connected the pixel in a peripheral region of the semiconductor substrate, where the peripheral region at least partially surrounds the active region. Forming a passivation layer with an opening exposing the pad on and/or over the photodiode structure. Covering the exposed pad with an etching prevention layer. Forming a color filter on and/or over the passivation layer corresponding to the pixel. Forming a microlens on and/or over the color filter. Removing the etching prevention layer from the pad.
1. A method comprising:
forming a photodiode structure in a semiconductor substrate;
forming a conductive pad over the semiconductor substrate adjacent to the photodiode structure;
forming an etching prevention layer over the conductive pad;
forming at least one of a color filter and a microlens over the photodiode structure; and
removing the etching prevention layer from over the conductive pad after said forming at least one of the color filter and the microlens,
wherein said forming the etching prevention layer is a selective formation process such that the etching prevention layer is substantially formed only over the conductive pad and substantially not over the passivation layer.
2. The method of claim 1 , wherein the method is a method of forming a CMOS image sensor.
3. The method of claim 1 , comprising:
forming a passivation layer over the photodiode structure and the conductive pad prior to said forming the etching prevention layer, wherein said at least one of the color filter and the microlens are formed over the passivation layer;
forming an opening in the passivation layer over the conductive pad to expose a surface of the conductive pad, wherein the etching prevention layer is formed through the opening.
4. The method of claim 1 , wherein said selective formation process comprises using a material for the etching prevention layer that substantially adheres to the conductive pad and does not substantially adhere to the passivation layer.
5. The method of claim 4 , wherein the material for the etching prevention layer comprises ruthenium.
6. The method of claim 4 , wherein a material of the passivation layer comprises silicon oxide.
7. The method of claim 4 , wherein a material of the conductive pad comprises aluminum.
8. The method of claim 1 , wherein the etching prevention layer has a thickness in a range from approximately 50 Å to approximately 100 Å.
9. A method comprising:
forming a photodiode structure in a semiconductor substrate;
forming a conductive pad over the semiconductor substrate adjacent to the photodiode structure;
forming an etching prevention layer over the conductive pad;
forming at least one of a color filter and a microlens over the photodiode structure; and
removing the etching prevention layer from over the conductive pad after said forming at least one of the color filter and the microlens,
wherein said forming the etching prevention layer comprises atomic layer deposition.
10. The method of claim 9 , wherein the atomic layer deposition is performed at a temperature ranging from approximately 150° C. to approximately 300° C.