Multigate Schottky diode
View Patent ↗A multigate Schottky diode comprising an electrically conducting active semiconductor region; first and second electrically connected metallic contact arms on the active semiconductor region forming ohmic contacts therewith; the ohmic contacts being spaced apart on the active semiconductor region to define a gate receiving channel therebetween. a plurality of electrically connected metallic gate fingers, the metallic gate fingers being in contact with the active semiconductor region to form Schottky junctions, the Schottky junctions being spaced apart on the active semiconductor region and extending at least partially along the gate receiving channel.
1. A multigate Schottky diode comprising:
an electrically conducting active semiconductor region that forms part of the semiconductor substrate, such that an electrically insulating substrate region splits the active semiconductor region into sub portions;
first and second metallic contact arms on the active semiconductor region forming ohmic contacts therewith, the ohmic contacts being spaced apart on the active semiconductor region to define a gate receiving channel therebetween;
a base, which electrically connects the first metallic contact arm to the second metallic contact arm; and
a single metallic gate strip comprising:
a plurality of metallic gate fingers, such that a gate finger is on at least two of the sub portions, the metallic gate fingers being electrically connected to one another by the single metallic gate strip and being in contact with the active semiconductor region to form Schottky junctions, the Schottky junctions being spaced apart on the active semiconductor region and extending at least partially along the gate receiving channel; and
a contact portion at least partially along the gate receiving channel and between the metallic gate fingers is supported directly by the insulating substrate region, such that the contact portion is separated from the active semiconductor region.
2. A multigate Schottky diode as claimed in claim 1 , the Schottky junctions being arranged in recesses in the active semiconductor region.
3. A multigate Schottky diode as claimed in claim 1 , wherein the active semiconductor region forms part of a face of the semiconductor substrate, the active semiconductor region being received by the electrically insulating substrate region.
4. A multigate Schottky diode as claimed in claim 3 , wherein the gate fingers extend off the active semiconductor region onto the insulating substrate region, the gate fingers being connected together at a gate connector on the insulating substrate region.
5. A multigate Schottky diode as claimed in claim 3 , wherein the contact arms extend off the active semiconductor region onto the insulating substrate region, the contact arms being connected together on the insulating region.
6. A multigate Schottky diode as claimed in claim 1 , wherein the active semiconductor region is n doped.
7. A multigate Schottky diode as claimed in claim 1 , wherein the active semiconductor region is received by an ion implanted electrically insulating substrate region.