Light-emitting devices
Light-emitting devices, and related components, systems and methods are disclosed.
1. A light-emitting device, comprising:
a multi-layer stack comprising III-V semiconductor materials including a light-generating region and a first layer supported by the light-generating region,
wherein a surface of the first layer is configured so that at least 45% of a total amount of light generated by the light-generating region emerges via the surface of the first layer, and
wherein the first layer has an edge which is at least one millimeter long.
2. The light-emitting device of claim 1 , wherein the surface of the first layer includes a dielectric function that varies spatially according to a pattern.
3. The light-emitting device of claim 1 , wherein the surface of the first layer is roughened.
4. The light-emitting device of claim 3 , wherein the surface of the first layer is also patterned.
5. The light-emitting device of claim 1 , wherein the edge is at least two millimeters long.
6. The light-emitting device of claim 1 , wherein the edge is at least three millimeters long.
7. The light-emitting device of claim 1 , wherein the first layer includes at least one additional edge which is at least one millimeter long.
8. The light-emitting device of claim 1 , wherein at least 60% of a total amount of light generated by the light-generating region emerges from the light-emitting device via the surface of the first layer.
9. The light-emitting device of claim 1 , wherein at least 70% of a total amount of light generated by the light-generating region emerges from the light-emitting device via the surface of the first layer.
10. The light-emitting device of claim 1 , wherein the multi-layer stack of materials is supported by the layer of reflective material.
11. The light-emitting device of claim 1 , further comprising a layer including phosphor disposed over the surface of the first layer.
12. The light-emitting device of claim 11 , wherein the layer including phosphor is substantially uniformly disposed over the surface of the first layer.
13. The light-emitting device of claim 11 , wherein sidewalls of the light-emitting device are substantially devoid of phosphor.
14. The light-emitting device of claim 11 , wherein the layer including phosphor is a cover of the light-emitting device.
15. The light-emitting device of claim 11 , further comprising a layer including a material that is substantially transparent to light that emerges from the light-emitting device, wherein the layer including the material that is substantially transparent is disposed adjacent the layer including phosphor.
16. The light-emitting device of claim 1 , wherein the first layer comprises a layer of n-doped III-V semiconductor material, and the multi-layer stack further comprises a layer of p-doped III-V semiconductor material.
17. The light-emitting device of claim 16 , wherein the III-V semiconductor material comprises GaN.
18. The light-emitting device of claim 1 , further comprising a layer of reflective material capable of reflecting at least about 50% of light generated by the light-generating region that impinges on the layer of reflective material.
19. The light-emitting device of claim 1 , further comprising electrical contacts configured to inject current into the light-emitting device.
20. The light-emitting device of claim 19 , wherein the electrical contacts are configured to vertically inject electrical current into the light-emitting device.
21. The light-emitting device of claim 1 , wherein the light-emitting device comprises a light-emitting diode.
22. A light-emitting device, comprising:
a multi-layer stack comprising inorganic materials including a light-generating region and a first layer supported by the light-generating region,
wherein a surface of the first layer is configured so that at least 45% of a total amount of light generated by the light-generating region emerges via the surface of the first layer, and
wherein the first layer has an edge which is at least one millimeter long.
23. A light-emitting device, comprising:
a multi-layer stack of materials including a light-generating region and a first layer supported by the light-generating region,
wherein a surface of the first layer is configured so that at least 45% of a total amount of light generated by the light-generating region emerges via the surface of the first layer, and
wherein the first layer has an edge which is at least one millimeter long.
24. A method of making a light-emitting device comprising:
providing a multi-layer stack comprising III-V semiconductor materials including a light-generating region and a first layer supported by the light-generating region;
configuring a surface of the first layer so that at least 45% of a total amount of light generated by the light-generating region emerges via the surface of the first layer; and
configuring the first layer so that an edge of the first layer is at least one millimeter long.
25. A method of making a light-emitting device comprising:
providing a multi-layer stack of materials including a light-generating region and a first layer supported by the light-generating region;
configuring a surface of the first layer so that at least 45% of a total amount of light generated by the light-generating region emerges via the surface of the first layer; and
configuring the first layer so that an edge of the first layer is at least one millimeter long.