Fabrication process of a semiconductor device to form ultrafine patterns smaller than resolution limit of exposure apparatus
View Patent ↗A method for fabricating an electron device on a substrate includes the steps of forming a dummy film over the substrate such that the dummy film covers a device region of the substrate and an outer region of the substrate outside the device region, forming a dummy pattern by patterning the dummy film such that the dummy pattern has a first height in the device region and a second height smaller than the first height in the outer region, forming another film over the substrate such that the film covers the dummy pattern in the device region and in the outer region with a shape conformal to a cross-sectional shape of the dummy pattern, and applying an anisotropic etching process acting generally perpendicularly to the substrate such that a surface of the substrate is exposed in the device region and in the outer region.
1. A method for fabricating a semiconductor device, comprising:
forming a dummy film over a substrate such that said dummy film covers a device region of said substrate and an outer region of said substrate outside said device region;
forming a dummy pattern line by patterning said dummy film such that said dummy pattern line has a first height in said device region and a second height smaller than said first height in said outer region;
forming another film over said substrate such that said another film covers said dummy pattern line in said device region and in said outer region; and
applying an anisotropic etching process to said substrate such that a surface of said substrate is exposed in said device region and in said outer region,
the anisotropic etching process being conducted in a direction perpendicular to the surface of said substrate to form first and second patterns in said device region respectively along a first sidewall surface of said dummy pattern line and a second sidewall surface of said dummy pattern line opposite to said first sidewall surface and completely remove said another film in said outer region to an amount exceeding the second height of the dummy pattern line; and
forming a semiconductor element in said device region by using said first and second patterns.
2. The method as claimed in claim 1 , wherein there is formed a depression on said substrate in correspondence to said device region, and wherein said dummy film is formed in said depression and has a substantially uniform flat surface over said device region and said outer region.
3. The method as claimed in claim 2 , wherein said dummy film fills said depression.
4. The method as claimed in claim 1 , wherein there is formed a depression on said substrate in correspondence to said device region, and wherein said dummy film fills a bottom part of said depression partially, said dummy film having a flat surface in said device region.
5. The method as claimed in claim 4 , wherein said depression is defined by a sidewall surface forming an oblique angle with respect to a top surface of said substrate.
6. The method as claimed in claim 1 ,
wherein said step of pattering said dummy film includes the step of:
forming said dummy pattern line over said substrate with said first height over said device region and said outer region; and
reducing said height of said dummy pattern line in said outer region.
7. The method as claimed in claim 1 , wherein said first and second patterns constitute a functional part of said semiconductor element.
8. The method as claimed in claim 1 , wherein said first and second patterns is used as a mask.
9. The method as claimed in claim 8 , wherein said another film comprises any of an insulation film, a semiconductor film and a conductor film.
10. The method as claimed in claim 1 , wherein said another film in said outer region is removed and said first and second patterns in said device region are formed after the anisotropic etching process is applied to said substrate.