Thin film transistors
A thin film transistor has a semiconducting layer comprising a semiconductor and a mixture enriched in metallic carbon nanotubes. The semiconducting layer has improved charge carrier mobility.
1. A thin-film transistor comprising a substrate, a dielectric layer, and a semiconducting layer, wherein the semiconducting layer comprises a semiconductor and a mixture of carbon nanotubes, the mixture comprising at least 40% by weight of metallic carbon nanotubes (MCNTs),
wherein the carbon nanotubes are surface modified with a surface modifying group selected from the group consisting of a thiophene-based oligomer or polymer, and non-conjugated alkyl having 1 to 30 atoms, the surface modifying group being covalently bonded to the surface of the carbon nanotubes.
2. The transistor of claim 1 , wherein the mixture comprises at least 50% by weight of MCNTs.
3. The transistor of claim 1 , wherein the mixture comprises at least 80% by weight of MCNTs.
4. The transistor of claim 1 , wherein the mixture comprises at least 90% by weight of MCNTs.
5. The transistor of claim 1 , wherein the mixture of carbon nanotubes is dispersed throughout the semiconductor.
6. The transistor of claim 1 , wherein the MCNTs are present in the amount of from about 0.001 to about 50 weight percent, based on the weight of the semiconductor.
7. The transistor of claim 1 , wherein the MCNTs are present in the amount of from about 0.01 to about 10 weight percent, based on the weight of the semiconductor.
8. The transistor of claim 1 , wherein the semiconducting layer comprises a first layer and a second layer; the mixture of carbon nanotubes is located in the first layer and the semiconductor is located in the second layer; and the first layer is located closer to the dielectric layer than the second layer.
9. The transistor of claim 8 , wherein the first layer comprises at least 10% by volume of the total volume of the semiconducting layer.
10. The transistor of claim 8 , wherein the first layer comprises from at least 10% to about 50% by volume of the total volume of the semiconducting layer.
11. A thin-film transistor comprising a substrate, a dielectric layer, and a semiconducting layer, wherein the semiconducting layer comprises a semiconductor and a mixture of carbon nanotubes, he mixture corn at least 40% b weight of metallic carbon nanotubes (MCNTs) wherein the MCNTs are surface modified with an thiophene-based oligomer or polymer of Formula A or B:
wherein x, y, and z are independently integers from 0 to 7; m is an integer from 1 to 3; n is an integer from 1 to 50; w is an integer from 0 to 5; R and R′ are independently selected from hydrogen, halogen, alkyl, alkoxyalkyl, siloxyalkyl, and perfluoroalkyl; and D is a divalent linkage.
12. A thin-film transistor comprising a substrate, a dielectric layer, and a semiconducting layer, wherein the semiconducting layer comprises a semiconductor and a mixture of carbon nanotubes, the mixture comprising at least 40% by weight of metallic carbon nanotubes (MCNTs), wherein the MCNTs are surface modified with an inorganic material selected from the group consisting of gold, silver, copper, nickel, zinc, cadmium, palladium, platinum, chromium, aluminum, ZnO, ZnSe, CdSe, Zn a In b O c (where a, b, and c are integers), GaAs, ZnO.SnO 2 , SnO 2 , gallium, germanium, tin, indium, indium oxide, and indium tin oxide.
13. The transistor of claim 1 , wherein the metallic carbon nanotubes are single-wall carbon nanotubes, double-wall carbon nanotubes, or multi-wall carbon nanotubes.
14. The transistor of claim 1 , wherein the transistor has a charge carrier mobility of at least 0.01 cm 2 /V·sec.
15. The transistor of claim 1 , wherein the transistor has a charge carrier mobility at least 10% greater than a transistor having the same composition but without the mixture of carbon nanotubes.
16. The transistor of claim 1 , wherein the semiconductor is an organic semiconductor comprising a thiophene unit.
17. The transistor of claim 1 , wherein the semiconductor is an inorganic semiconductor.