Semiconductor device and electro-optical device
View Patent ↗A semiconductor device and an electro-optical device that ensures a stable output are provided even when there is a change in a source-drain current in a saturated operation region of a thin film transistor due to kink effects. The thin film transistor has a multi-gate structure with a polycrystalline silicon film as an active layer, and a source-side first thin film transistor portion and a drain-side second thin film transistor portion connected in series. The first thin film transistor portion has a drain-side back gate electrode that is connected with a first front gate electrode. The second thin film transistor portion has a source-side back gate electrode that is connected with a second front gate electrode.
1. A semiconductor device comprising:
a substrate; and
a thin film transistor that uses a polycrystalline silicon film disposed over the substrate as an active layer thereof,
wherein the polycrystalline silicon film is sandwiched between a first gate insulation layer and a second gate insulation layer,
the thin film transistor has a first thin film transistor portion and a second thin film transistor portion,
the first thin film transistor portion having a first channel region and a first front gate electrode, the first channel region being formed at the drain-side position of the polycrystalline silicon film, the first front gate electrode being opposed to the first channel region with the first gate insulation layer being sandwiched therebetween,
the second thin film transistor portion having a second channel region and a second front gate electrode, the second channel region being formed at a source-side position adjacent indirectly to the drain-side first channel region with an impurity implantation region being interposed therebetween in the polycrystalline silicon film, the second front gate electrode being opposed to the second channel region with the first gate insulation layer being sandwiched therebetween,
the first thin film transistor portion has the same conductivity type as that of the second thin film transistor portion, the first thin film transistor portion and the second thin film transistor portion being connected in series,
the first front gate electrode and the second front gate electrode are electrically connected to each other, and
a source-side back gate electrode is formed at a region that is opposed to the second channel region with the second gate insulation layer being sandwiched therebetween, a source potential being applied to the source-side back gate electrode.
2. The semiconductor device according to claim 1 , wherein the source-side back gate electrode is formed at a region overlapping a part of the second channel region extending from the source end to a halfway point without reaching the drain end thereof.
3. The semiconductor device according to claim 1 , wherein a drain-side back gate electrode that is electrically connected to the first front gate electrode is formed at a region that is opposed to the first channel region with the second gate insulation layer being sandwiched therebetween.
4. The semiconductor device according to claim 3 , wherein the drain-side back gate electrode is formed at a region overlapping a part of the first channel region extending from the source end to a halfway point without reaching the drain end thereof.
5. The semiconductor device according to claim 1 , wherein the second gate insulation layer, the polycrystalline silicon film, and the first gate insulation layer are laminated over the substrate in the order of appearance herein.
6. The semiconductor device according to claim 1 , wherein the first gate insulation layer, the polycrystalline silicon film, and the second gate insulation layer are laminated over the substrate in the order of appearance herein.
7. An electro-optical device having the semiconductor device according to claim 1 , wherein the semiconductor device is an element substrate having a plurality of pixels formed thereon.