Semiconductor wafer, method of manufacturing the same and semiconductor device
View Patent ↗A modified layer 5 and an altered layer 8 are formed outside a dicing point of a dicing area 3. Thus without forming another interface between different physical properties on the dicing point, it is possible to prevent chipping from progressing along a crystal orientation from an interface between a semiconductor element 2 and a semiconductor substrate 1 and from a surface of the semiconductor element during dicing, thereby suppressing the development of chipping to the semiconductor element.
1. A method of manufacturing a semiconductor device, comprising:
preparing a semiconductor substrate;
forming a semiconductor element on the semiconductor substrate;
forming a dicing area in a peripheral area of the semiconductor element;
forming in the dicing area at least a crystallinity modified layer in the depth direction of the semiconductor substrate; and
dicing the semiconductor substrate in the dicing area by cutting at dicing cutting points spaced away from the crystallinity modified layer.
2. The method of manufacturing a semiconductor device according to claim 1 , wherein the crystallinity modified layer is formed by laser radiation.
3. The method of manufacturing a semiconductor device according to claim 2 , wherein the crystallinity modified layer is formed by multiple exposures to laser radiation.
4. The method of manufacturing a semiconductor device according to claim 2 , further comprising forming at least an altered layer in the dicing area by laser radiation.
5. The method of manufacturing a semiconductor device according to claim 4 , wherein the altered layer is carbonized.
6. The method of manufacturing a semiconductor device according to claim 4 , wherein the altered layer is formed on the crystallinity modified layer.
7. The method of manufacturing a semiconductor device according to claim 2 , wherein the crystallinity modified layer extends to a back surface of the semiconductor substrate.
8. The method of manufacturing a semiconductor device according to claim 2 , wherein the laser radiation is emitted from a formation surface of the semiconductor element.
9. The method of manufacturing a semiconductor device according to claim 2 , wherein the laser radiation is emitted toward a back surface of the semiconductor substrate.
10. A method of manufacturing a semiconductor device, comprising:
preparing a semiconductor substrate;
forming a semiconductor element on the semiconductor substrate;
forming a dicing area in a peripheral area of the semiconductor element;
forming in the dicing area at least two crystallinity modified layers in the depth direction of the semiconductor substrate; and
dicing the semiconductor substrate in the dicing area between the two crystallinity modified layers.
11. The method of manufacturing a semiconductor device according to claim 10 , wherein the crystallinity modified layer is formed by laser radiation.
12. The method of manufacturing a semiconductor device according to claim 11 , wherein the crystallinity modified layer is formed by multiple exposures to laser radiation.
13. The method of manufacturing a semiconductor device according to claim 11 , further comprising forming at least an altered layer in the dicing area by laser radiation.
14. The method of manufacturing a semiconductor device according to claim 13 , wherein the altered layer is carbonized.
15. The method of manufacturing a semiconductor device according to claim 13 , wherein the altered layer is formed on the crystallinity modified layer.
16. The method of manufacturing a semiconductor device according to claim 11 , wherein two crystallinity modified layers are formed in the dicing area.
17. The method of manufacturing a semiconductor device according to claim 16 , wherein the two crystallinity modified layers are formed to different depths in the substrate.
18. The method of manufacturing a semiconductor device according to claim 11 , wherein the crystallinity modified layers extend to a back surface of the semiconductor substrate.
19. The method of manufacturing a semiconductor device according to claim 11 , wherein the laser radiation is emitted from a formation surface of the semiconductor element.
20. The method of manufacturing a semiconductor device according to claim 11 , wherein the laser radiation is emitted toward a back surface of the semiconductor substrate.