IP Library Granted Patent US 7,868,538
Granted Patent B2
US 7,868,538 · App. 11/953,187 · Granted Jan 11, 2011

Organic light emitting display device and method of fabricating the same

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Quick Facts
Patent No.
US 7,868,538
App. No.
11/953,187
Granted
Jan 11, 2011
Kind
B2
Abstract

An organic light emitting display device (OLED), which does not include a separate cathode, and a method of fabricating the same, are provided. The OLED includes: a substrate; a reflective layer disposed on the substrate; a charge generation layer disposed on the reflective layer; an organic layer disposed on the charge generation layer and including an emission layer; and an anode disposed on the organic layer.

Claims (40)

1. An organic light emitting display device (OLED), comprising:

a substrate;

a reflective layer disposed on the substrate;

a charge generation layer disposed on the reflective layer to generate electrons and holes;

an organic layer disposed on the charge generation layer and including an emission layer; and

an anode disposed on the organic layer.

2. The OLED according to claim 1 , wherein the reflective layer is formed of aluminum, silver, or an alloy thereof.

3. The OLED according to claim 1 , wherein the charge generation layer comprises a plurality of layers.

4. The OLED according to claim 1 , wherein the charge generation layer is formed to a thickness of 70 to 2000 Å.

5. The OLED according to claim 1 , wherein the organic layer comprises at least one layer selected from a group consisting of a hole injection layer, a hole transport layer, a hole blocking layer, an electron transport layer, and an electron injection layer.

6. The OLED according to claim 3 , wherein the plurality of layers comprise an inorganic compound layer, and a mixed layer of an electron transport layer material and a metal dopant.

7. The OLED according to claim 6 , wherein the inorganic compound layer is formed to a thickness of 20 to 1000 Å.

8. The OLED according to claim 6 , wherein the inorganic compound layer is formed of one selected from a group consisting of tungsten oxide (WO 3 ), vanadium oxide (V 2 O 5 ), molybdenum oxide (MoO x ), beryllium oxide (Be 2 O 3 ), rhenium oxide (Re 2 O 7 ), ferric chloride (FeCl 3 ), ferric bromide (FeBr 3 ), ferric iodide (FeI 3 ), aluminum chloride (AlCl 3 ), aluminum bromide (AlBr 3 ), gallium chloride (GaCl 3 ), gallium bromide (GaBr 3 ), gallium iodide (GaI 3 ), indium chloride (InCl 3 ), indium bromide (InBr 3 ), indium iodide (InI 3 ), antimony pentachloride (SbCl 5 ), arsenic pentafluoride (AsF 5 ), arsenic trifluoride (AsF 3 ), and boron trifluoride (BF 3 ).

9. The OLED according to claim 6 , wherein the mixed layer is formed to a thickness of 50 to 1000 Å.

10. The OLED according to claim 6 , wherein the electron transport layer material comprises one selected from a group consisting of a quinoline derivative, a benzoquinoline derivative, an oxazole-based ligand, a thiazole-based ligand, an oxadiazole derivative, and a phenanthroline derivative.

11. The OLED according to claim 6 , wherein the metal dopant comprises one selected from magnesium, cesium, and lithium.

12. An organic light emitting display device (OLED), comprising:

a substrate;

a semiconductor layer disposed on the substrate;

a gate insulating layer disposed on an entire surface of the substrate including the semiconductor layer;

a gate electrode disposed in a region corresponding to the semiconductor layer on the gate insulating layer;

an interlayer insulating layer disposed on the entire surface of the substrate including the gate electrode;

source and drain electrodes disposed on the interlayer insulating layer, and electrically connected to the semiconductor layer;

a passivation layer disposed on the entire surface of the substrate including the source and drain electrodes;

a planarization layer disposed on the passivation layer;

a reflective layer disposed on the planarization layer;

a charge generation layer disposed on the substrate including the reflective layer, and

electrically connected to the source or drain electrode, and to generate electrons and holes;

an organic layer disposed on the charge generation layer, and including an emission layer; and

an anode disposed on the organic layer.

13. The OLED according to claim 12 , wherein the reflective layer is formed of aluminum, silver, or an alloy thereof.

14. The OLED according to claim 12 , wherein the charge generation layer comprises a plurality of layers.

15. The OLED according to claim 12 , wherein the charge generation layer is formed to a thickness of 70 to 2000 Å.

16. The OLED according to claim 12 , wherein the organic layer comprises at least one layer selected from a group consisting of a hole injection layer, a hole transport layer, a hole blocking layer, an electron transport layer, and an electron injection layer.

17. The OLED according to claim 14 , wherein the plurality of layers comprise an inorganic compound layer, and a mixed layer of an electron transport layer material and a metal dopant.

18. The OLED according to claim 17 , wherein the inorganic compound layer is formed to a thickness of 20 to 1000 Å.

19. The OLED according to claim 17 , wherein the inorganic compound layer is formed of one selected from a group consisting of tungsten oxide (WO 3 ), vanadium oxide (V 2 O 5 ), molybdenum oxide (MoO x ), beryllium oxide (Be 2 O 3 ), rhenium oxide (Re 2 O 7 ), ferric chloride (FeCl 3 ), ferric bromide (FeBr 3 ), ferric iodide (FeI 3 ), aluminum chloride (AlCl 3 ), aluminum bromide (AlBr 3 ), gallium chloride (GaCl 3 ), gallium bromide (GaBr 3 ), gallium iodide (GaI 3 ), indium chloride (InCl 3 ), indium bromide (InBr 3 ), indium iodide (InI 3 ), antimony pentachloride (SbCl 5 ), arsenic pentafluoride (AsF 5 ), arsenic trifluoride (AsF 3 ), and boron trifluoride (BF 3 ).

20. The OLED according to claim 17 , wherein the mixed layer is formed to a thickness of 50 to 1000 Å.

21. The OLED according to claim 17 , wherein the electron transport layer material comprises one selected from a group consisting of a quinoline derivative, a benzoquinoline derivative, an oxazole-based ligand, a thiazole-based ligand, an oxadiazole derivative, and a phenanthroline derivative.

22. The OLED according to claim 17 , wherein the metal dopant comprises one selected from magnesium, cesium, and lithium.

Assignments (3)
MERGER Recorded Sep 21, 2012
From: SAMSUNG MOBILE DISPLAY CO., LTD.
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 029087/0636 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 12, 2008
From: SAMSUNG SDI CO., LTD.
To: SAMSUNG MOBILE DISPLAY CO., LTD.
Reel/Frame 022010/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 13, 2007
From: LEE, SANG-BONG; NOH, SOK-WON
To: SAMSUNG SDI CO., LTD.
Reel/Frame 020273/0568 →