Organic electronic device with an organic semiconductor layer

1. An organic electronic device comprising:

a first layer comprising a conductive or semiconductive organic material;

a second layer comprising a conductive or semiconductive inorganic material, and in electrical contact with the first layer; and

an interface layer between the first layer and the second layer,

wherein the interface layer comprises a conductive or semiconductive organic material and a conductive or semiconductive inorganic material, and

wherein the organic material and inorganic material of the interface layer have a concentration gradient from the first layer to the second layer, the concentration of the inorganic material in the interface layer being higher at the second layer than at the first layer.

2. The organic electronic device of claim 1 , wherein the organic material of the interface layer is substantially identical to the organic material of the first layer, and the inorganic material of the interface layer is substantially identical to the inorganic material of the second layer.

3. The organic electronic device of claim 1 , wherein the concentration of the organic material of the interface layer is higher at the first layer than at the second layer.

4. The organic electronic device of claim 1 , wherein the interface layer comprises layers of the organic material and the inorganic material.

5. The organic electronic device of claim 1 , wherein the inorganic material of the interface layer is a metal or a compound of the metal.

6. The organic electronic device of claim 1 , wherein the inorganic material of the interface layer comprises a material selected from the group consisting of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, and compounds thereof.

7. The organic electronic device of claim 1 , wherein the inorganic material of the interface layer comprises a material selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), ZnO, and In 2 O 3 .

8. The organic electronic device of claim 1 further comprising a gate electrode electrically insulated from the first layer, wherein the organic material of the first layer is a semiconductive organic material, and the second layer comprises at least one of a source electrode or a drain electrode that is insulated from the gate electrode.

9. The organic electronic device of claim 8 , wherein the semiconductive organic material comprises a material compound selected from the group consisting of pentacene, tetracene, anthracene, naphthalene, alpha-6-thiophene, alpha-4-thiophene, perylene and its derivatives, rubrene and its derivatives, coronene and its derivatives, perylene tetracarboxylic diimide and its derivatives, perylene tetracarboxylic dianhydride and its derivatives, oligoacen of naphthalene and its derivatives, alpha-5-thiophene oligothiophene and its derivatives, phthalocianin that does or does not include a metal and its derivatives, naphthalene tetracarboxylic diimide and its derivatives, naphthalene tetracarboxylic dianhydride and its derivatives, phyromeliticdianhydride and its derivatives, phyromelitic diimid and its derivatives, a conjugate polymer that includes thiopene and its derivatives, and a polymer that comprises fluorene and its derivatives.

10. The organic electronic device of claim 1 , wherein the first layer comprises a light emitting layer.

11. The organic electronic device of claim 1 , wherein the first layer comprises a material selected from the group consisting of copper phthalocyanine (CuPc), N,N′-Di(naphthalene-1-yl)-N,N′-diphenyl-benzidine (NPB), tris-8-hydroxyquinoline aluminum (Alq3), and combinations thereof.