Silicon nitride body and method of manufacture
View Patent ↗A densified silicon nitride body can be formed using a lanthana-based sintering aid. The composition may exhibit properties that provide a material useful in a variety of applications that can benefit from improved wear characteristics. The composition may be densified by sintering and hot isostatic pressing.
1. A sintered silicon nitride body comprising aluminum nitride, greater than or equal to 1% aluminum oxide, greater than or equal to 1% lanthanum and greater than or equal to 1% neodymium, the body having a mean grain width of less than 0.50 μm and a fracture toughness of greater than 8.0 MPam 1/2 using the Indentation Four Point Bending technique of Niihara, and the body having a density of greater than 99.9% by the rule of mixtures.
2. The body of claim 1 comprising essentially no rare earth elements other than neodymium and lanthanum.
3. The body of claim 1 comprising greater than or equal to about 4% lanthana.
4. The body of claim 1 wherein the body has been formed at a sintering temperature of about 1750 degrees C. and in a hot isostatic pressing process at a temperature of about 1750 degrees C.
5. The body of claim 1 wherein the body comprises a rolling element in a bearing.