IP Library Granted Patent US 8,242,006
Granted Patent B2
US 8,242,006 · App. 11/962,494 · Granted Aug 14, 2012

Smooth electrode and method of fabricating same

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Quick Facts
Patent No.
US 8,242,006
App. No.
11/962,494
Granted
Aug 14, 2012
Kind
B2
Abstract

A smooth electrode is provided. The smooth electrode includes at least one metal layer having thickness greater than about 1 micron; wherein an average surface roughness of the smooth electrode is less than about 10 nm.

Claims (17)

1. A method of fabricating an electrode, comprising:

providing a wafer, wherein the wafer comprises bonding a thermally blocking layer including one or more vias through the thermal blocking layer;

providing a substrate;

depositing a plurality of layers having electrically and thermally conductive materials such as metal on a top surface of the substrate; then

bonding the wafer to the metal coated substrate; then

electroplating one or more vias in the wafer using a metal to form an electrical feedthroughs through a thermal blocking layer; and then;

removing the substrate to form a smooth electrode.

2. The method of claim 1 , wherein a surface roughness of the smooth electrode is substantially equal to the surface roughness of the substrate.

3. The method of claim 2 , wherein a thickness of metal coated substrate is greater than about 1 micron and wherein an average surface roughness of the smooth electrode is less than about 10 nm.

4. A method of fabricating an electrode, comprising:

providing a sacrificial substrate;

patterning a top surface of the sacrificial substrate to include nanoscale features; then

depositing a metal layer on the top surface of the sacrificial substrate including the nanoscale features;

planarizing a top surface of the metal layer; then bonding a wafer to the metal layer, wherein the wafer comprises a thermally blocking layer; and then;

removing the sacrificial substrate to form a textured electrode by etching.

5. The method of claim 4 , wherein the thermally blocking layer comprises one or more vias through the thermal blocking layer.

6. The method of claim 4 , further comprising electroplating the one or more vias with a metal to form the electrical feedthroughs through the thermal blocking layer.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 13, 2016
From: GENERAL ELECTRIC COMPANY
To: HAIER US APPLIANCE SOLUTIONS, INC.
Reel/Frame 038966/0001 →
CONFIRMATORY LICENSE Recorded Aug 12, 2013
From: GENERAL ELECTRIC GLOBAL RESEARCH
To: ENERGY, UNITED STATES DEPARTMENT OF
Reel/Frame 031087/0951 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 21, 2007
From: WEAVER, STANTON EARL; KENNERLY, STACEY JOY; AIMI, MARCO FRANCESCO
To: GENERAL ELECTRIC COMPANY
Reel/Frame 020283/0516 →