Granted Patent B2

US 7,824,949 · App. 11/963,008 · Granted Nov 2, 2010

Abstract

Claims (89)

1. A method of forming a sensor array, comprising:

depositing a first semiconductor layer;

depositing a source/drain contact layer over the first semiconductor layer;

depositing a second semiconductor layer on the source/drain contact layer; and

patterning the source/drain contact layer and the second semiconductor layer substantially simultaneously resulting in a patterned second semiconductor layer, a source contact, and a drain contact;

patterning the first semiconductor layer;

forming a protective layer over at least a part of the patterned second semiconductor layer; and

removing the patterned second semiconductor layer exposed by the protective layer;

wherein the patterned second semiconductor layer forms part of a sensor of the sensor array.

2. The method of claim 1 , wherein patterning the first semiconductor layer occurs after forming the protective layer.

3. The method of claim 1 , wherein:

the second semiconductor layer is deposited directly on the source/drain contact layer.

4. The method of claim 1 , further comprising:

depositing an encapsulation layer over the patterned second semiconductor layer.

5. The method of claim 4 , further comprising:

forming an opening in the encapsulation layer to expose the patterned second semiconductor layer.

6. The method of claim 5 , further comprising:

depositing a third semiconductor layer over the second semiconductor layer;

wherein at least part of the second semiconductor layer and at least part of the third semiconductor layer form the sensor.

7. The method of claim 6 , further comprising:

depositing a fourth semiconductor layer over the second semiconductor layer prior to depositing the third semiconductor layer;

wherein the third semiconductor layer is formed over the fourth semiconductor layer.

8. The method of claim 7 , wherein:

the second semiconductor layer is an n-type semiconductor layer;

the third semiconductor layer is a p-type semiconductor layer; and

the fourth semiconductor layer is an intrinsic semiconductor layer.

9. The method of claim 6 , wherein depositing the third semiconductor layer occurs after forming the opening in the encapsulation layer.

10. The method of claim 1 , further comprising:

patterning the first semiconductor layer to form islands after patterning the source/drain contact layer and the second semiconductor layer.

11. The method of claim 10 , further comprising:

depositing a gate conductive layer; and

depositing a gate insulating layer over the gate conductive layer;

wherein the first semiconductor layer is deposited over the gate insulating layer.

12. A method of forming a sensor array, comprising:

depositing a source/drain contact layer;

depositing a first semiconductor layer on the source/drain contact layer; and

patterning the source/drain contact layer and the semiconductor layer substantially simultaneously resulting in a patterned first semiconductor layer;

depositing an encapsulation layer over the patterned first semiconductor layer;

forming an opening in the encapsulation layer to expose the patterned first semiconductor layer; and

depositing a second semiconductor layer in the opening;

wherein at least part of the patterned first semiconductor layer and at least part of the second semiconductor layer form at least part of a sensor of the sensor array;

depositing a third semiconductor layer prior to depositing the source/drain contact layer, the source/drain contact layer deposited over the third semiconductor layer; and

patterning the third semiconductor layer to form an island after patterning the source/drain contact layer and the first semiconductor layer;

wherein depositing the second semiconductor layer includes depositing the second semiconductor layer over the island.

13. The method of claim 12 , wherein forming the opening in the encapsulation layer comprises:

forming the opening in the encapsulation layer such that substantially all of the patterned first semiconductor layer is exposed.

14. A method of forming a sensor array, comprising:

depositing a source/drain contact layer;

depositing a first semiconductor layer on the source/drain contact layer;

patterning the source/drain contact layer and the first semiconductor layer substantially simultaneously resulting in a patterned semiconductor layer;

forming a protective layer over at least a part of the patterned first semiconductor layer;

depositing a second semiconductor layer; and

patterning the second semiconductor layer after forming the protective layer;

wherein:

the source/drain contact layer is deposited over the second semiconductor layer; and

the patterned first semiconductor layer forms part of a sensor of the sensor array.

15. A method of forming a sensor array, comprising:

depositing a source/drain contact layer;

depositing a first semiconductor layer on the source/drain contact layer; and

patterning the source/drain contact layer and the first semiconductor layer substantially simultaneously resulting in a patterned first semiconductor layer;

depositing a second semiconductor layer;

patterning the second semiconductor layer to form islands after patterning the source/drain contact layer and the first semiconductor layer;

wherein:

the source/drain contact layer is deposited over the second semiconductor layer; and

the patterned first semiconductor layer forms part of a sensor of the sensor array.

16. The method of claim 15 , further comprising:

depositing a gate conductive layer; and

depositing a gate insulating layer over the gate conductive layer;

wherein the second semiconductor layer is deposited over the gate insulating layer.

17. A method of forming a sensor array, comprising:

depositing a first semiconductor layer;

depositing a source/drain contact layer over the first semiconductor layer;

depositing a second semiconductor layer on the source/drain contact layer; and

patterning the source/drain contact layer and the second semiconductor layer substantially simultaneously resulting in a patterned second semiconductor layer, a source contact, and a drain contact;

patterning the first semiconductor layer;

depositing an encapsulation layer over the patterned second semiconductor layer; and

forming an opening in the encapsulation layer to expose the patterned second semiconductor layer;

wherein the patterned second semiconductor layer forms part of a sensor of the sensor array.

18. The method of claim 17 , further comprising:

depositing a third semiconductor layer over the second semiconductor layer;

wherein at least part of the second semiconductor layer and at least part of the third semiconductor layer form the sensor.

19. The method of claim 18 , further comprising:

depositing a fourth semiconductor layer over the second semiconductor layer prior to depositing the third semiconductor layer;

wherein the third semiconductor layer is formed over the fourth semiconductor layer.

20. The method of claim 19 , wherein:

the second semiconductor layer is an n-type semiconductor layer;

the third semiconductor layer is a p-type semiconductor layer; and

the fourth semiconductor layer is an intrinsic semiconductor layer.

21. The method of claim 19 , wherein depositing the third semiconductor layer occurs after forming the opening in the encapsulation layer.

Assignments (9)