METHOD FOR FABTRICATING SEMICONDUCTOR DEVICE
According to the first aspect of the present invention, a method for fabricating a semiconductor device with a silicon carbide (SiC) film is comprised of a process to grow a silicon carbide film on a substrate; and a process to form a groove in the periphery of a region on the silicon carbide film in which crystal defects are aggregated. According to the second aspect of the present invention, a method for fabricating a semiconductor device with a silicon carbide (SiC) film is comprised of a process to grow a silicon carbide film on a substrate; and a process to form a groove on said silicon carbide film so that a region in which crystal defects are aggregated in said silicon carbide film is removed.
1 . A method for fabricating a semiconductor device with a silicon carbide (SiC) film comprising:
a process to grow a silicon carbide film on a substrate; and
a process to form a groove in the periphery of a region of said silicon carbide film in which crystal defects are aggregated.
2 . The method for fabricating a semiconductor device according to claim 1 , wherein
said region in which the crystal defects are aggregated is a region with defects of 10 4 pieces/cm 2 or more.
3 . The method for fabricating a semiconductor device according to claim 1 , wherein
said region where the crystal defects are aggregated is formed intentionally by a predetermined method.
4 . The method for fabricating a semiconductor device according to claim 1 , wherein
said crystal defects include at least one of micropipe, screw dislocation, or edge dislocation.
5 . A method for fabricating a semiconductor device having a silicon carbide (SiC) film comprising:
a process to grow a silicon carbide film on a substrate; and
a process to grow a groove on said silicon carbide film so that a region in which crystal defects are aggregated in said silicon carbide film is removed.
6 . The method for fabricating a semiconductor device according to claim 5 , wherein
said region in which the crystal defects are aggregated is a region having defects of 10 4 pieces/cm 2 or more.
7 . The method for fabricating a semiconductor device according to claim 5 , wherein
said region where the crystal defects are aggregated is formed intentionally by a predetermined method.
8 . The method for fabricating a semiconductor device according to claim 5 , wherein
said crystal defects include at least one of micropipe, screw dislocation, and edge dislocation.