Printed organic logic circuits using an organic semiconductor as a resistive load device
View Patent ↗A method of forming an organic inverter includes providing a first metal layer having a first portion for coupling a source of an OFET to a first power supply voltage, a second portion for coupling a drain of the OFET to an output terminal and a first load resistor terminal, and a third portion for coupling a second load resistor terminal to a second power supply voltage, providing a semiconductor layer for overlapping a portion of the first and second first metal layer portions to form an OFET active area, and for overlapping a portion of the second and third metal layer portions to form a toad resistor, providing a dielectric layer for overlapping the active area of the OFET and the semiconductor area of the load resistor to isolates the first metal layer and semiconductor area from the second metal layer, and providing a second metal layer for overlapping the active area of the OFET to form a gate of the OFET and an input terminal.
1. A method of forming an inverter comprising:
providing a first metal layer having a first portion for coupling a source of an OFET to a first power supply voltage, a second portion for coupling a drain of the OFET to an output terminal and a first load resistor terminal, and a third portion for coupling a second load resistor terminal to a second power supply voltage;
providing a semiconductor layer overlapping a portion of the first portion of the first metal layer and second portion of the first metal layer to form an OFET active area, and overlapping a portion of the second portion of the first metal layer and third portion of the first metal layer to form a load resistor;
providing a dielectric layer overlapping a portion of the first portion of the first metal layer, second portion of the first metal layer, and the semiconductor layer that form the OFET active area, and overlapping a portion of the second portion of the first metal layer, third portion of the first metal layer and the semiconductor layer that form the load resistor area; and
providing a second metal layer overlapping the OFET active area to form a gate of the OFET and an input terminal.
2. The method of claim 1 , wherein providing the first metal layer comprises printing a layer of conductive ink.
3. The method of claim 2 , wherein the conductive ink comprises conductive polymer.
4. The method of claim 1 , wherein providing the semiconductor layer comprises printing a polymer layer.
5. The method of claim 4 , wherein the polymer comprises polythiophene.
6. The method of claim 4 , wherein the dielectric layer comprises a patterned semiconductor layer.
7. The method of claim 4 , wherein the semiconductor layer comprises a sheet semiconductor layer.
8. The method of claim 1 , wherein providing the dielectric layer comprises printing a polymer layer.
9. The method of claim 8 , wherein the polymer comprises non-conductive polymer.
10. The method of claim 8 , wherein the dielectric layer comprises a patterned dielectric layer.
11. The method of claim 8 , wherein the dielectric layer comprises a sheet dielectric layer.
12. The method of claim 1 , wherein providing the second metal layer comprises printing a layer of conductive ink.
13. The method of claim 12 , wherein the conductive ink comprises conductive polymer.
14. The method of claim 1 , further comprising providing the first metal layer on a substrate.
15. The method of claim 14 , wherein the substrate comprises glass, plastic, or cardboard.
16. The method of claim 1 , wherein the OFET comprises a P-type transistor.
17. The method of claim 1 , wherein the OFET comprises a N-type transistor.
18. The method of claim 1 , further comprising incorporating the inverter into a NAND gate.
19. The method of claim 1 , further comprising incorporating the inverter into a NOR gate.