Thin film transistor substrate and fabricating method thereof
View Patent ↗The present invention relates to a thin film transistor substrate and a fabricating method thereof. The thin film transistor according to one embodiment of the present invention comprises: a gate wire and a data wire formed to cross each other on an insulating substrate and define a pixel area; a thin film transistor formed on the intersection of the gate wire and the data wire; an inorganic insulating layer covering the thin film transistor and having a surface that a prominence and depression pattern formed on; and a reflective layer provided on the prominence and depression pattern. Thus, the present invention provides a thin film transistor substrate and a fabricating method thereof, which reduce the time required in the process and enhance the productivity.
1. A fabricating method for a thin film transistor substrate, comprising:
forming a gate wire on an insulating substrate;
forming a data wire crossed with the gate wire and defining a pixel area;
forming a thin film transistor on the intersection of the gate wire and the data wire;
forming an inorganic insulating layer covering the thin film transistor;
forming an organic photosensitive layer on the inorganic insulating layer;
disposing a mask for the diffraction exposure over the organic photosensitive layer;
forming a photosensitive layer pattern by exposing the organic photosensitive layer to light through the mask and developing the organic photosensitive layer;
forming a prominence and depression pattern at inorganic insulating layer by etching the inorganic insulating layer through the photosensitive layer pattern; and
forming a reflective layer on the prominence and depression pattern of the inorganic insulating layer,
wherein the mask includes a blocking part, a semi-transmitting part having a plurality of slit parts and a transmitting part, the ratio of the width of the blocking part to the width of the semi-transmitting part is 3:4, and the gap between the slits is different at both sides of the center of the semi-transmitting part.
2. The fabricating method for a thin film transistor substrate according to claim 1 , wherein the photosensitive pattern is formed to be tapered to a center of the prominence and depression pattern.
3. The fabricating method for a thin film transistor substrate according to claim 1 , wherein the mask is disposed over the inorganic insulating layer in an alignment so that the center of the blocking part corresponds to the center of the prominence and depression pattern.