Method of fabricating array substrate for liquid crystal display device

1. A method of fabricating an array substrate for a liquid crystal display device, the method comprising:

forming a gate line, a data line that crosses the gate line and a thin film transistor connected to the gate line and the data line on a substrate;

forming an organic insulating material layer on the gate line, the data line and the thin film transistor, the organic insulating material layer having photo curability, flexibility and dynamic stability;

forming a passivation layer that has a drain contact hole from the organic insulating material layer by using a stamp that has a convex portion, the drain contact hole exposing a drain electrode of the thin film transistor, wherein the stamp comprises a base substrate of a first transparent material and the convex portion of a second transparent material on the base substrate; and

forming a pixel electrode on the passivation layer, the pixel electrode connected to the drain electrode through the drain contact hole.

2. The method according to claim 1 , wherein the forming a passivation layer step comprises:

disposing the stamp that has the convex portion over the organic insulating material layer;

inserting the convex portion into the organic insulating material layer; and

removing the stamp from the organic insulating material layer.

3. The method according to claim 2 , further comprising curing the organic insulating material layer before the removing the stamp step.

4. The method according to claim 2 , wherein the inserting the convex portion into the organic insulating material layer step comprises contacting the convex portion and the organic insulating material layer to push out the organic insulating material layer from the convex portion.

5. The method according to claim 2 , wherein the step of inserting the convex portion into the organic insulating material layer comprises:

moving the substrate toward the stamp; and

pressurized the stamp toward the substrate with a pressure.

6. The method according to claim 5 , wherein the pressure is greater than about 0 ATM and less than about 10 ATM.

7. The method according to claim 2 , wherein the step of disposing the stamp comprises supporting the stamp with a supporting unit at a boundary of the stamp.

8. The method according to claim 7 , wherein the step of irradiating a ultraviolet ray is performed after the stamp is separated from the supporting unit.

9. The method according to claim 1 , wherein the stamp has a surface energy less than about 25 mJ/m 2 and the organic insulating material layer has a surface tension less than about 40 mN/m.

10. The method according to claim 1 , wherein the first transparent material is selected from a group consisting of glass, quartz and polyurethane acrylate.

11. The method according to claim 1 , wherein the convex portion and the organic insulating material layer satisfy a relation of:

h>3d, when the convex portion has a quadrangular pyramid shape that has a height h;

s>3√(6)d, when the convex portion has a rectangular tetrahedron shape that has a side s; and

h>12d/π, when the convex portion has a cone shape that has a height h, where the organic insulating material layer has a thickness d.

12. The method according to claim 1 , wherein the second transparent material of the convex portion has an elasticity.

13. The method according to claim 12 , wherein the convex portion has a shape selected from a group consisting of a quadrangular pyramid shape, a regular tetrahedron shape, a cone shape, a truncated quadrangular pyramid shape, a truncated triangular pyramid shape and a truncated cone shape.

14. The method according to claim 12 , wherein the second transparent material comprises polydimethylsiloxane.

15. A method of fabricating an array substrate for a liquid crystal display device, the method comprising:

forming a gate line, a data line that crosses the gate line and a thin film transistor connected to the gate line and the data line on a substrate;

forming an inorganic insulating material layer on the gate line, the data line and the thin film transistor;

forming a photoresist layer on the inorganic insulating material layer;

forming an opening in the photoresist layer by using a stamp that has a convex portion, wherein the stamp comprises a base substrate of a first transparent material and the convex portion of a second transparent material on the base substrate;

patterning the inorganic insulating material layer using the photoresist layer with the opening as an etch mask to form a passivation layer that has a drain contact hole, the drain contact hole exposing a drain electrode of the thin film transistor;

removing the photoresist layer; and

forming a pixel electrode on the passivation layer, the pixel electrode connected to the drain electrode through the drain contact hole.

16. The method according to claim 15 , wherein the forming an opening in the photoresist layer step comprises:

disposing the stamp that has the convex portion over the photoresist layer;

inserting the convex portion into the photoresist layer; and

removing the stamp from the photoresist layer.

17. The method according to claim 16 , further comprising curing the photoresist layer before the removing the stamp step.

18. The method according to claim 16 , wherein the step of inserting the convex portion into the photoresist layer comprises contacting the convex portion and the inorganic insulating material layer to push out the photoresist layer from the convex portion.

19. The method according to claim 15 , further comprising partially removing the photoresist layer by ashing.

20. A method of forming a hole in a layer, the method comprising:

forming an organic insulating material layer on a substrate, the organic insulating material layer having photo curability, flexibility and dynamic stability;

contacting a stamp that has a convex portion and the organic insulating material layer to push out the organic insulating material layer from the convex portion, wherein the stamp comprises a base substrate of a first transparent material and the convex portion of a second transparent material on the base substrate; and

removing the stamp from the organic insulating material layer.

21. The method according to claim 20 , wherein the contacting step comprises:

disposing the stamp that has the convex portion over the organic insulating material layer;

inserting the convex portion into the organic insulating material layer to push out the organic insulating material layer from the convex portion; and

curing the organic insulating material layer after the inserting step.

22. A method of forming a hole in a layer, the method comprising:

forming an inorganic insulating material layer on a substrate;

forming a photoresist layer on the inorganic insulating material layer;

forming an opening in the photoresist layer by using a stamp that has a convex portion, wherein the stamp comprises a base substrate of a first transparent material and the convex portion of a second transparent material on the base substrate;

patterning the inorganic insulating material layer using the photoresist layer with the opening as an etch mask; and

removing the photoresist layer.

23. The method according to claim 22 , wherein the forming an opening in the photoresist layer step comprises:

disposing the stamp that has the convex portion over the photoresist layer;

inserting the convex portion into the photoresist layer; and

removing the stamp from the photoresist layer.

24. The method according to claim 23 , further comprising curing the photoresist layer before the removing the stamp step.