Method of forming inorganic insulating layer and method of fabricating array substrate for display device using the same
View Patent ↗A method of forming an inorganic insulating layer on a substrate comprises supplying a mixed gas between the substrate and a target, and generating a plasma between the substrate and the target. The target comprises a silicon-based material. The method further comprises depositing a plurality of ions from the plasma on the substrate.
1. A method of forming an inorganic insulating layer on a substrate, the method comprising:
supplying a mixed gas between the substrate and two targets;
generating a plasma between the substrate and the two targets, wherein the two targets each comprises a silicon-based material, and the two targets are formed of silicon nitride, the two targets each having a front surface facing the substrate and a rear surface opposing the front surface;
generating a magnetic field return path by having opposite magnetic polarity disposed adjacent to the rear surface of each of the two targets to increase density of the plasma by the two targets; and
depositing a plurality of ions from the plasma on the substrate,
wherein the substrate and the two targets are spaced apart from each other by a distance of 110 cm to 150 cm,
wherein the generating a plasma step comprises supplying an AC power across the two targets, wherein each of the two targets is coupled to a corresponding AC electrode of the AC power, and
wherein a resistivity of each of the two targets is within a range of about 0 ohm-cm to about 10 3 ohm·cm.
2. The method according to claim 1 , wherein supplying a power is performed under a temperature of about 24 DC to about 250 DC.
3. The method according to claim 2 , wherein the power has a power density of about 0.92 W/cm 3 to about 5.2 W/cm 3 .
4. The method according to claim 2 , wherein the power is about 1.5 kW to about 30 kW.
5. The method according to claim 1 , wherein a pressure of about 0.4 Pa to about 1.5 Pa is applied.
6. The method according to claim 1 , wherein each of the two targets is doped with impurities selected from a group consisting of boron and phosphorus.
7. The method according to claim 6 , wherein a concentration of the impurities is within a range of about 1 ppm to about 999 ppm.
8. The method according to claim 1 , wherein the mixed gas comprises an argon gas and a nitrogen gas.
9. The method according to claim 8 , wherein a flow rate of the argon gas is within a range of about 50 sccm to about 1300 sccm and a flow rate of the nitrogen gas is within a range of about 50 sccm to 2000 sccm.
10. The method according to claim 8 , wherein the mixed gas further comprises at least one gas selected from a group consisting of an oxygen gas, an ammonia gas and a hydrogen gas.
11. The method according to claim 10 , wherein a flow rate of the hydrogen gas is within a range of about 1 sccm to about 50 sccm.
12. The method according to claim 1 , wherein the AC power has a frequency of about 70 kHz.
13. The method according to claim 1 , wherein the substrate is selected from a group consisting of a glass substrate and a plastic substrate.
14. The method according to claim 8 , wherein the mixed gas further comprises an ammonia gas.