IP Library Granted Patent US 7,860,136
Granted Patent B2
US 7,860,136 · App. 11/975,951 · Granted Dec 28, 2010

Fault tolerant laser diode package

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Quick Facts
Patent No.
US 7,860,136
App. No.
11/975,951
Granted
Dec 28, 2010
Kind
B2
Abstract

A laser diode package ( 10 ) according to the present invention is tolerant of short-circuit and open-circuit failures. The laser diode package ( 10 ) includes a laser diode bar ( 12 ), a forward-biased diode ( 14 ), a heat sink ( 18 ), and a lid ( 16 ) which may have fusible links ( 86 ). The laser diode bar ( 12 ) and the forward-biased diode ( 14 ) are electrically connected in parallel between the heat sink ( 18 ) and the lid ( 16 ). The emitting region of the laser diode bar ( 12 ) is aligned to emit radiation away from the forward-biased diode ( 14 ). Several packages can be stacked together to form a laser diode array ( 42 ). The forward-biased diode ( 14 ) allows current to pass through it when an open-circuit failure has occurred in the corresponding laser diode bar ( 12 ), thus preventing an open-circuit failure from completely disabling the array ( 42 ). The fusible links ( 86 ), if used on the lid ( 16 ), prevent damaged active regions ( 90 ) in a laser diode bar ( 12 ) from short-circuiting and drawing more electrical current than the other active regions ( 90 ).

Claims (13)

1. A laser diode package, comprising:

a heat sink, said heat sink having a top end;

a lid;

a laser diode bar positioned between said heat sink and said lid, said laser diode bar producing energy in response to current being conducted in a direction from said heat sink to said lid, said laser diode bar having an emitting surface that is positioned within 0.001 inches of said top end of said heat sink; and

a forward-biased diode positioned between said heat sink and said lid, said forward-biased diode being arranged to conduct current from said heat sink to said lid in response to an open-circuit failure in said laser diode bar, said forward-biased diode having a turn-on voltage in the direction of said current that is greater than a turn-on voltage in the direction of said current of said laser diode bar under normal operating conditions;

a first continuous solder layer on said heat sink such that said solder layer joins said heat sink to said forward-biased diode and said laser diode bar, said first continuous solder layer is a pretinned layer of solder located on a plurality of surfaces of said heat sink; and

a second continuous solder layer on said lid such that said solder layer joins said lid to said forward-biased diode and said laser diode bar, said second continuous solder layer is a pretinned layer of solder located on a plurality of surfaces of said lid.

2. The laser diode package of claim 1 , wherein a turn-on voltage for said forward-biased diode is greater than said turn-on voltage of said laser diode bar by less than 1 Volt.

3. The laser diode package of claim 1 , wherein said forward-biased diode is made from a semiconductor material, said semiconductor material including a substrate with epitaxial layers.

4. The laser diode package of claim 3 , wherein said semiconductor material is made from gallium arsenide.

5. The laser diode package of claim 3 , wherein said substrate with said epitaxial layers results in an equivalent circuit of two diodes in series.

6. The laser diode package of claim 1 , wherein said heat sink is made from an electrically conductive material.

7. The laser diode package of claim 1 , wherein said lid is approximately the same height as said heat sink.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 10, 2010
From: NORTHROP GRUMMAN SPACE & MISSION SYSTEMS CORP.
To: NORTHROP GRUMMAN SYSTEMS CORPORATION
Reel/Frame 023915/0446 →