Micro electro-mechanical system and method of manufacturing the same
View Patent ↗A micro electro-mechanical system, which can be stably formed so as to prevent sticking of a movable part and which has a narrow gap, and a method of manufacturing the same are provided. The micro electro-mechanical system includes at least one fixed electrode formed above a principal surface of a semiconductor substrate and at least one movable electrode formed on the principal surface. The at least one movable electrode includes the movable part separated from the principal surface and the at least one fixed electrode. The movable part is movable with respect to the principal surface and the at least one fixed electrode. The method of manufacturing the micro electro-mechanical system includes a sacrifical film formation step for forming a sacrifical film above the principal surface, an electrode layer formation step for forming an electrode layer above the principal surface so as to cover over the sacrifical film, an etching step for partially etching the electrode layer via a pattern so as to form the at least one electrode and the at least one fixed electrode, a sacrifical film removal step for removing the sacrifical film, and a conducting film formation step for forming a conducting film on surfaces of the at least one electrode and the at least one fixed electrode.
1. A method of manufacturing a micro electro-mechanical system comprising at least one fixed electrode formed above a principal surface of a semiconductor substrate and at least one movable electrode formed on said principal surface, said at least one movable electrode including a movable part separated from said principal surface and said at least one fixed electrode, said movable part movable with respect to said principal surface and said at least one fixed electrode,
said method comprising:
a sacrifical film formation step for forming a sacrifical film above said principal surface;
an electrode layer formation step for forming an electrode layer above said principal surface so as to cover said sacrifical film;
an etching step for partially etching said electrode layer via a pattern so as to form said at least one electrode and said at least one fixed electrode;
a sacrifical film removal step for removing said sacrifical film; and
a conducting film formation step for forming a conducting film on surfaces of said at least one electrode and said at least one fixed electrode.
2. A method of manufacturing a micro electro mechanical system according to claim 1 ,
wherein
said electrode layer is formed from poly-silicon.
3. A method of manufacturing a micro electro mechanical system according to claim 1 ,
wherein
said electrode layer is formed from Poly-SiGe.
4. A method of manufacturing a micro electro mechanical system according to claim 1 ,
wherein
said electrode layer is a layered product comprising a conductive metallic film and an insulating film.
5. A method of manufacturing a micro electro mechanical system according to claim 1 ,
wherein
said conducting film is formed from tungsten.
6. A method of manufacturing a micro electro mechanical system according to claim 2 ,
wherein
said conducting film is formed from tungsten.
7. A method of manufacturing a micro electro mechanical system according to claim 3 ,
wherein
said conducting film is formed from tungsten.
8. A method of manufacturing a micro electro mechanical system according to claim 4 ,
wherein
said conducting film is formed from tungsten.
9. A method of manufacturing a micro electro mechanical system according to claim 1 further comprising:
a thickness estimation step for measuring a resonance frequency of said at least one movable electrode after said sacrifical film removal step so as to estimate a thickness of said conducting film on the basis of a difference between a measured resonance frequency and a design value,
wherein
said conducting film is formed in accordance with said thickness estimated in said thickness estimation step.
10. A method of manufacturing a micro electromechanical system according to claim 2 further comprising:
a thickness estimation step for measuring a resonance frequency of said at least one movable electrode after said sacrifical film removal step so as to estimate a thickness of said conducting film on the basis of a difference between a measured resonance frequency and a design value,
wherein
said conducting film is formed in accordance with said thickness estimated in said thickness estimation step.
11. A method of manufacturing a micro electromechanical system according to claim 3 further comprising:
a thickness estimation step for measuring a resonance frequency of said at least one movable electrode after said sacrifical film removal step so as to estimate a thickness of said conducting film on the basis of a difference between a measured resonance frequency and a design value,
wherein
said conducting film is formed in accordance with said thickness estimated in said thickness estimation step.
12. A method of manufacturing a micro electromechanical system according to claim 4 further comprising:
a thickness estimation step for measuring a resonance frequency of said at least one movable electrode after said sacrifical film removal step so as to estimate a thickness of said conducting film on the basis of a difference between a measured resonance frequency and a design value,
wherein
said conducting film is formed in accordance with said thickness estimated in said thickness estimation step.
13. A method of manufacturing a micro electromechanical system according to claim 5 further comprising:
a thickness estimation step for measuring a resonance frequency of said at least one movable electrode after said sacrifical film removal step so as to estimate a thickness of said conducting film on the basis of a difference between a measured resonance frequency and a design value,
wherein
said conducting film is formed in accordance with said thickness estimated in said thickness estimation step.
14. A method of manufacturing a micro electromechanical system comprising at least one fixed electrode formed above a principal surface of a semiconductor substrate and at least one movable electrode formed on said principal surface, said at least one movable electrode including a movable part separated from said principal surface and said at least one fixed electrode, said movable part movable with respect to said principal surface and said at least one fixed electrode,
said method comprising:
a sacrifical film formation step for forming a sacrifical film above said principal surface;
an electrode layer formation step for forming an electrode layer above said principal surface so as to cover over said sacrifical film;
an etching step for partially etching said electrode layer via a pattern so as to form said at least one electrode and said at least one fixed electrode;
a sacrifical film removal step for removing said sacrifical film;
a thickness estimation step for measuring a resonance frequency of said at least one movable electrode so as to estimate a thickness of a conducting film on the basis of a difference between a measured resonance frequency and a design value; and
a conducting film formation step for forming said conducting film on surfaces of said at least one electrode and said at least one fixed electrode, said conducting film having a thickness in accordance with said thickness estimated in said thickness estimation step.