Display substrate, display device and method of manufacturing the same
View Patent ↗A flexible display substrate includes: a thin film transistor on the flexible substrate, the thin film transistor including a gate electrode, a gate insulating layer insulating the gate electrode, a channel layer on the gate insulating layer, a source electrode connected with the channel layer, and a drain electrode connected with the channel layer; a first stress absorbing layer below the thin film transistor; a first protection layer on the first stress absorbing layer; a second stress absorbing layer on the thin film transistor; a second protection layer on the second stress absorbing layer; and a pixel electrode on the second protection layer, the pixel electrode being connected with the drain electrode.
1. A flexible display substrate comprising:
a thin film transistor on the flexible substrate, the thin film transistor including a gate electrode extending from a gate line, a gate insulating layer insulating the gate electrode, a channel layer on the gate insulating layer, a source electrode connected with the channel layer, and a drain electrode connected with the channel layer;
a storage capacitor on the flexible substrate, the storage capacitor including the gate line, the gate insulating layer and a storage capacitor electrode covering the gate line;
a first stress absorbing layer below the thin film transistor and the storage capacitor;
a first protection layer on the first stress absorbing layer;
a second stress absorbing layer on the thin film transistor and the storage capacitor;
a second protection layer on the second stress absorbing layer;
a third stress absorbing layer on the pixel electrode;
a pixel electrode on the second protection layer, the pixel electrode being connected with the drain electrode via a first contact hole in the second stress absorbing layer and the second protection layer and with the storage capacitor electrode via a second contact hole in the second stress absorbing and the second protection layer; and
a third protection layer between the second stress absorbing layer and the thin film transistor.
2. The flexible display substrate of claim 1 ,
wherein the first stress absorbing layer includes an organic layer;
wherein the first protection layer includes an inorganic layer;
wherein the second stress absorbing layer includes an organic layer;
wherein the second protection layer includes an inorganic layer; and
wherein the third protection layer includes an inorganic layer.
3. The flexible display substrate of claim 1 , wherein the third stress absorbing layer includes an organic layer.
4. A method of manufacturing a flexible display substrate comprising:
forming a first stress absorbing layer on the flexible substrate;
forming a first protection layer on the first stress absorbing layer;
forming a thin film transistor on the first protection layer, the thin film transistor including a gate electrode extending from a gate line, a gate insulating layer insulating the gate electrode, a channel layer on the gate insulating layer, a source electrode connected with the channel layer, and a drain electrode connected with the channel layer;
forming a storage capacitor on the flexible substrate, the storage capacitor including the gate line, the gate insulating layer and a storage capacitor electrode covering the gate line;
forming a second stress absorbing layer on the thin film transistor and the storage capacitor;
forming a second protection layer on the second stress absorbing layer;
forming a pixel electrode on the second protection layer, the pixel electrode being connected with the drain electrode via a first contact hole in the second stress absorbing layer and the second protection layer and with the storage capacitor electrode via a second contact hole in the second stress absorbing and the second protection layer; and
a third protection layer below the second stress absorbing layer and on the thin film transistor and the storage capacitor.
5. The method of claim 4 ,
wherein the first stress absorbing layer includes an organic layer;
wherein the first protection layer includes an inorganic layer;
wherein the second stress absorbing layer includes an organic layer;
wherein the second protection layer includes an inorganic layer; and
wherein the third protection layer includes an inorganic layer.
6. The flexible display substrate of claim 4 , further comprising a third stress absorbing layer on the pixel electrode.
7. The flexible display substrate of claim 6 wherein the third stress absorbing layer includes an organic layer.
8. A method of manufacturing an electrophoretic ink flexible display device comprising:
forming a first stress absorbing layer on a flexible substrate;
forming a first protection layer on the first stress absorbing layer;
forming a thin film transistor on the first protection layer, the thin film transistor including a gate electrode extending from a gate line, a gate insulating layer insulating the gate electrode, a channel layer on the gate insulating layer, a source electrode connected with the channel layer, and a drain electrode connected with the channel layer;
forming a storage capacitor on the flexible substrate, the storage capacitor including the gate line, the gate insulating layer and a storage capacitor electrode covering the gate line;
forming a second stress absorbing layer on the thin film transistor and the storage capacitor;
forming a second protection layer on the second stress absorbing layer;
forming a pixel electrode on the second protection layer, the pixel electrode being connected with the drain electrode via a first contact hole in the second stress absorbing layer and the second protection layer and with the storage capacitor electrode via a second contact hole in the second stress absorbing and the second protection layer;
forming an electrophoretic ink film on the flexible substrate; and
a third protection layer below the second stress absorbing layer and on the thin film transistor and the storage capacitor.
9. The method of claim 8 ,
wherein the first stress absorbing layer includes an organic layer;
wherein the first protection layer includes an inorganic layer;
wherein the second stress absorbing layer includes an organic layer;
wherein the second protection layer includes an inorganic layer; and
wherein the third protection layer includes an inorganic layer.
10. A method of manufacturing a flexible liquid crystal display device comprising:
forming a first stress absorbing layer on a first flexible substrate;
forming a first protection layer on the first stress absorbing layer;
forming a thin film transistor on the first protection layer, the thin film transistor including a gate electrode extending from a gate line, a gate insulating layer insulating the gate electrode, a channel layer on the gate insulating layer, a source electrode connected with the channel layer, and a drain electrode connected with the channel layer;
forming a storage capacitor on the flexible substrate, the storage capacitor including the gate line, the gate insulating layer and a storage capacitor electrode covering the gate line;
forming a second stress absorbing layer on the thin film transistor;
forming a second protection layer on the second stress absorbing layer;
forming a pixel electrode on the second protection layer, the pixel electrode being connected with the drain electrode via a first contact hole in the second stress absorbing layer and the second protection layer and with the storage capacitor electrode via a second contact hole in the second stress absorbing and the second protection layer;
forming a second flexible substrate;
forming a liquid crystal layer between the first and second flexible substrates, and
a third protection layer below the second stress absorbing layer and on the thin film transistor and the storage capacitor.
11. The method of claim 10 , further comprising:
forming a black matrix on the second flexible substrate;
forming a color filter layer on the black matrix;
forming an overcoat layer on the color filter layer; and
forming a common electrode on the overcoat layer.
12. The method of claim 10 ,
wherein the first stress absorbing layer includes an organic layer;
wherein the first protection layer includes an inorganic layer;
wherein the second stress absorbing layer includes an organic layer;
wherein the second protection layer includes an inorganic layer; and
wherein the third protection layer includes an inorganic layer.
13. A flexible display substrate, comprising:
a thin film transistor on the flexible substrate, the thin film transistor including a gate electrode extending from a gate line, a gate insulating layer insulating the gate electrode, a channel layer on the gate insulating layer, a source electrode connected with the channel layer, and a drain electrode connected with the channel layer;
a storage capacitor on the flexible substrate, the storage capacitor including the gate line, the gate insulating layer and a storage capacitor electrode covering the gate line;
a first stress absorbing layer below the thin film transistor and the storage capacitor;
a first protection layer on the first stress absorbing layer;
a second stress absorbing layer on the thin film transistor and the storage capacitor;
a second protection layer on the second stress absorbing layer; and
a pixel electrode on the second protection layer, the pixel electrode being connected with the drain electrode via a first contact hole in the second stress absorbing layer and the second protection layer and with the storage capacitor electrode via a second contact hole in the second stress absorbing and the second protection layer; and
a third protection layer below the second stress absorbing layer and on the thin film transistor and the storage capacitor.
14. The flexible display substrate of claim 13 , wherein the third protection layer contacts an amorphous silicon pattern of the channel layer exposed between the source electrode and the drain electrode.