Etch resist solution, method of fabricating thin film pattern using the same and method of fabricating an LCD device using the same

1. An etch resist solution, comprising:

a base polymer;

a printing solvent that satisfies the condition 6>δ solvent or δ solvent >11, where δ solvent is the solubility parameter of the solvent, or satisfies the condition 6<δ solvent <11 and μ<2(D), where μ is the dipole moment;

a carrier solvent;

a dye of bis(4-N-N-dimethylamino-phenyl)-(2-fluorophenyl)acetonitrile; and

a surfactant, wherein the surfactant includes at least one of palmitic acid, oleic acid, or a sulfonate based material such as dioctyl(2-ethylhexyl)sulfosuccinate, FOS 100 (CF 3 (CF 2 ) 4 (CH 2 CH 2 0) 10 ) or FSN-100 (CF 3 (CF 2 ) 5 (CH 2 CH 2 0) 14 ),

wherein the printing solvent includes propylene carbonate,

wherein the carrier solvent includes butanol, and

wherein the base polymer has a content in the range of about 3 to about 30 wt %, the printing solvent has a content in the range of about 10 to about 50 vol %, the carrier solvent has a content in the range of about 50 to about 90 vol %, and the surfactant has a content in the range of about 0.01 to 3 wt %.

2. The etch resist solution of claim 1 , wherein the base polymer includes at least one of meta-cresol novolac and para-cresol novolac.

3. The etch resist solution of claim 1 , having a viscosity in the range of about 3 to about 6 cp and a surface tension in the range of about 18 to about 27 mN/m.

4. A method of fabricating a thin film pattern, comprising:

injecting an etch resist solution into a blanket on a printing roller, wherein the etch resist solution includes a surfactant, a dye of bis(4-N-N-dimethylamino-phenyl)-(2-fluorophenyl)acetonitrile, a carrier solvent and a printing solvent that satisfies the condition 6>δ solvent or δ solvent >11, where δ solvent is the solubility parameter of the solvent, or satisfies the condition 6¢δ solvent <11 and μ<2(D), where μ is the dipole moment of the solvent;

rotating the printing roller to uniformly coat the etch resist solution on the blanket;

rolling the printing roller coated with the etch resist solution onto a printing plate to pattern the etch resist solution to thereby form an etch resist pattern;

transferring the etch resist pattern from the printing roller to a substrate;

hardening the etch resist pattern; and

forming a desired thin film pattern on the substrate using the etch resist pattern,

wherein the printing solvent includes propylene carbonate,

wherein the carrier solvent includes butanol,

wherein the surfactant includes at least one of palmitic acid, oleic acid, or a sulfonate based material such as dioctyl(2-ethylhexyl)sulfosuccinate, FOS 100 (CF 3 (CF 2 ) 4 (CH 2 CH 2 0) 10 ) or FSN-100 (CF 3 (CF 2 ) 5 (CH 2 CH 2 0) 14 ); and

wherein the etch resist solution includes a base polymer having a content in the range of about 3 to about 30 wt %, the printing solvent having a content in the range of about 10 to about 50 vol %, a carrier solvent having a content in the range of about 50 to about 90 vol %, and a surfactant having a content in the range of about 0.01 to 3 wt %.

5. The method of claim 4 , wherein a conductive layer is formed on the substrate and is at least one of a gate electrode layer, a source electrode layer, a drain electrode layer, or a pixel electrode layer.

6. The method of claim 4 , wherein forming the desired thin film pattern is performed by etching and wherein the etch resist pattern is removed.

7. The method of claim 6 , the thin film pattern is at least one of a gate electrode, a source electrode, a drain electrode, or a pixel electrode.

8. The method of claim 4 , wherein the etch resist solution further includes a base polymer of at least one of meta-cresol novolac and para-cresol novolac.

9. The method of claim 4 , wherein the etch resist solution has a viscosity in the range of about 3 to about 6 cp and a surface tension in the range of about 18 to about 27 mN/m.

10. A method of fabricating a LCD device, comprising:

preparing a thin film transistor substrate including:

injecting an etch resist solution into a blanket on a printing roller, wherein the etch resist solution includes a surfactant, a dye of bis(4-N-N-dimethylamino-phenyl)-(2-fluorophenyl)acetonitrile, a carrier solvent and a printing solvent that satisfies the condition 6>δ solvent or δ solvent >11, where δ solvent is the solubility parameter of the solvent, or satisfies the condition 6<δ solvent <11 and μ<2(D), where μ is the dipole moment of the solvent;

rotating the printing roller to uniformly coat the etch resist solution on the blanket;

rolling the printing roller coated with the etch resist solution onto a printing plate to pattern the etch resist solution to thereby form an etch resist pattern;

transferring the etch resist pattern from the printing roller to a substrate;

hardening the etch resist pattern; and

forming a desired thin film pattern on the substrate using the etch resist pattern;

preparing a color filter substrate;

providing a liquid crystal layer between the thin film transistor substrate and color filter substrate; and

bonding the thin film transistor substrate and color filter substrate,

wherein the printing solvent includes propylene carbonate,

wherein the carrier solvent includes butanol,

wherein the surfactant includes at least one of palmitic acid, oleic acid, or a sulfonate based material such as dioctyl(2-ethylhexyl)sulfosuccinate, FOS 100 (CF 3 (CF 2 ) 4 (CH 2 CH 2 0) 10 ) or FSN-100 (CF 3 (CF 2 ) 5 (CH 2 CH 2 0) 14 );

wherein the etch resist solution includes a base polymer having a content in the range of about 3 to about 30 wt %, the printing solvent having a content in the range of about 10 to about 50 vol %, a carrier solvent having a content in the range of about 50 to about 90 vol %, and a surfactant having a content in the range of about 0.01 to 3 wt %.

11. The method of claim 10 , wherein the prepared thin film transistor substrate includes a gate electrode, a source electrode, a drain electrode, and a pixel electrode.

12. The method of claim 10 , wherein forming the desired thin film pattern is performed by etching and wherein the etch resist pattern is removed.

13. The method of claim 10 , the thin film pattern is at least one of a gate electrode, a source electrode, a drain electrode, or a pixel electrode.

14. The method of claim 10 , wherein the etch resist solution further includes a base polymer of at least one of meta-cresol novolac and para-cresol novolac.

15. The method of claim 10 , wherein the etch resist solution has a viscosity in the range of about 3 to about 6 cp and a surface tension in the range of about 18 to about 27 mN/m.