Organic light emitting display device and method of fabricating the same

1 . An organic light emitting display device, comprising:

a substrate;

a thin film transistor disposed on the substrate, the thin film transistor including a semiconductor layer, a gate electrode, and source and drain electrodes;

a first insulating layer disposed on the thin film transistor;

an inorganic planarization layer disposed on the first insulating layer;

a second insulating layer disposed on the inorganic planarization layer;

a first electrode disposed on the second insulating layer, and electrically connected to the source and drain electrodes;

an organic layer disposed on the first electrode, the organic layer including an emissive layer; and

a second electrode disposed on the organic layer.

2 . The organic light emitting display device according to claim 1 , wherein each of the first and second insulating layers is a silicon nitride layer or a silicon oxide layer.

3 . The organic light emitting display device according to claim 1 , wherein the first insulating layer is formed to a thickness from about 100 to about 3000 Å.

4 . The organic light emitting display device according to claim 1 , wherein the inorganic planarization layer is formed of silicate on glass (SOG).

5 . The organic light emitting display device according to claim 4 , wherein the SOG comprises a material selected from the group consisting of silica glass, alkyl siloxane polymer, alkyl silsesquioxane polymer, hydrogen silsesquioxane polymer, hydrogen alkyl silsesquioxane polymer, and combinations thereof.

6 . The organic light emitting display device according to claim 1 , wherein the inorganic planarization layer is formed to a thickness from about 0.5 to about 2 μm.

7 . The organic light emitting display device according to claim 1 , wherein the second insulating layer is formed to a thickness from about 500 to about 1000 Å.

8 . A method of fabricating an organic light emitting display device, the method comprising:

forming a thin film transistor including a semiconductor layer, a gate electrode, and source and drain electrodes on a substrate;

forming a first insulating layer on the thin film transistor,

forming an inorganic planarization layer on the first insulating layer;

forming a second insulating layer on the inorganic planarization layer;

forming a via hole for exposing the source and drain electrodes in the first insulating layer, in the inorganic planarization layer, and in the second insulating layer;

forming a first electrode electrically connected to the source and drain electrodes through the via hole;

forming an organic layer including an emissive layer on the first electrode; and

forming a second electrode on the organic layer.

9 . The method according to claim 8 , wherein each of the first and second insulating layers is formed of a silicon oxide layer or a silicon nitride layer.

10 . The method according to claim 8 , wherein the first insulating layer is formed to a thickness from about 100 to about 3000 Å.

11 . The method according to claim 8 , wherein the inorganic planarization layer is formed of silicate on glass (SOG).

12 . The method according to claim 11 , wherein the SOG comprises a material selected from the group consisting of silica glass, alkyl siloxane polymer, alkyl silsesquioxane polymer, hydrogen silsesquioxane polymer, hydrogen alkyl silsesquioxane polymer, and combinations thereof.

13 . The method according to claim 8 , wherein the inorganic planarization layer is formed to a thickness from about 0.5 to about 2 μm.

14 . The method according to claim 8 , wherein the inorganic planarization layer is formed on the first insulating layer by spin coating.

15 . The method according to claim 8 , wherein the second insulating layer is formed to a thickness from about 500 to about 1000 Å.

16 . An organic light emitting display device, comprising:

a thin film transistor;

a first insulating layer;

an inorganic planarization layer, the first insulating layer being disposed between and in contact with the thin film transistor and the inorganic planarization layer;

a second insulating layer, the inorganic planarization layer being disposed between and in contact with the first insulating layer and the second insulating layer;

a first electrode electrically connected to the thin film transistor, the second insulating layer being disposed between and in contact with the inorganic planarization layer and the first electrode;

an organic layer including an emissive layer, the first electrode being disposed between and in contact with the second insulating layer and the organic layer; and

a second electrode, the organic layer being disposed between and in contact with the first electrode and the second electrode.

17 . The organic light emitting display device according to claim 16 , wherein each of the first and second insulating layers comprises a material selected from the group consisting of a silicon nitride layer, a silicon oxide layer, and combinations thereof.

18 . The organic light emitting display device according to claim 16 , wherein the first insulating layer is formed to a thickness from about 100 to about 3000 Å.

19 . The organic light emitting display device according to claim 16 , wherein the inorganic planarization layer is formed to a thickness from about 0.5 to about 2 μm.

20 . The organic light emitting display device according to claim 16 , wherein the second insulating layer is formed to a thickness from about 500 to about 1000 Å.