IP Library Granted Patent US 7,700,955
Granted Patent B2
US 7,700,955 · App. 11/982,930 · Granted Apr 20, 2010

Semiconductor device and optical apparatus

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Quick Facts
Patent No.
US 7,700,955
App. No.
11/982,930
Granted
Apr 20, 2010
Kind
B2
Abstract

A semiconductor device includes a substrate, a semiconductor layer formed on the substrate, and an optically functional portion formed by using at least a portion of the semiconductor layer. The optically functional portion performs light emission or light reception. The semiconductor device further includes a first driving electrode that is electrically connected to a semiconductor layer on a surface of the optically functional portion, and the first driving electrode drives the optically functional portion. The semiconductor device further includes an encapsulating electrode that is formed on the semiconductor layer to surround periphery of the optically functional portion, and electrically connected to the first driving electrode.

Claims (21)

1. A semiconductor device, comprising:

a substrate;

a semiconductor layer formed on the substrate;

an optically functional portion formed by using at least a portion of the semiconductor layer, the optically functional portion performing light emission or light reception;

a first driving electrode electrically connected to a semiconductor layer on a surface of the optically functional portion, the first driving electrode driving the optically functional portion; and

an encapsulating electrode formed on the semiconductor layer to surround periphery of the optically functional portion, and electrically connected to the first driving electrode.

2. The semiconductor device according to claim 1 , wherein the optically functional portion comprises a post structure and a groove that forms the post structure; wherein the first driving electrode is provided on the post structure, and wherein at least a portion of the encapsulating electrode is provided on the semiconductor layer outside of the groove when viewed from the post structure.

3. The semiconductor device according to claim 1 , wherein the semiconductor layer comprises a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type on the first semiconductor layer; wherein the groove has a depth ranging from the second semiconductor layer to the first semiconductor layer; wherein the first driving electrode is electrically connected to the second semiconductor layer; and wherein the encapsulating electrode is formed on an insulating layer that is formed on the semiconductor layer and extending along the groove, and connected to the first driving electrode.

4. The semiconductor device according to claim 3 , wherein a second groove is provided outside of the encapsulating electrode when viewed from the post structure; and wherein a second driving electrode is formed on the semiconductor layer outside of the second groove when viewed from the post structure, the second driving electrode driving the optically functional portion, and being electrically connected to the first semiconductor layer through a contact hole provided at a bottom portion of the second groove.

5. The semiconductor device according to claim 1 , wherein the height of the first driving electrode in a vertical direction from the substrate is lower than the height of the encapsulating electrode.

6. The semiconductor device according to claim 1 , wherein the optically functional portion comprises a plurality of surface emitting semiconductor laser devices arranged in two dimensional arrays, and each of the surface emitting semiconductor laser devices is surrounded by the encapsulating electrode through a groove, respectively.

7. The semiconductor device according to claim 1 , wherein the optically functional portion comprises at least one light emitting portion and at least one light receiving portion that receives a portion of light emitted by the light emitting portion; and wherein the light emitting portion and the light receiving portion are surrounded by the encapsulating electrode through a groove.

8. An optical apparatus comprising:

a semiconductor device; and

a mounting substrate on which the semiconductor device is mounted;

wherein the semiconductor device includes a substrate, a semiconductor layer formed on the substrate, an optically functional portion formed by using at least a portion of the semiconductor layer, the optically functional portion performing light emission or light reception, a first driving electrode electrically connected to a semiconductor layer on a surface of the optically functional portion, the first driving electrode driving the optically functional portion; and an encapsulating electrode formed on the semiconductor layer to surround periphery of the optically functional portion, and electrically connected to the first driving electrode,

and wherein the mounting substrate faces the optically functional portion and the encapsulating electrode, and the encapsulating electrode is connected to a wiring layer formed on the mounting substrate, and

the mounting substrate passes light at a position that corresponds to the optically functional portion.

9. The optical apparatus according to claim 8 , wherein the encapsulating electrode of the semiconductor device is electrically connected to an electronic circuit on the mounting substrate through the wiring layer.

10. The optical apparatus according to claim 8 , wherein the semiconductor device is encapsulated with a resin.

11. The optical apparatus according to claim 8 , wherein the semiconductor device irradiates a living object with light emitted from the optically functional portion, and receives light reflected therefrom or scattering light.

Assignments (2)
CHANGE OF NAME Recorded Aug 12, 2021
From: FUJI XEROX CO., LTD.
To: FUJIFILM BUSINESS INNOVATION CORP.
Reel/Frame 058287/0056 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 6, 2007
From: KUWATA, YASUAKI; NAKAYAMA, HIDEO; ISHII, RYOJI; NAKAMURA, KAYOKO
To: FUJI XEROX CO., LTD.
Reel/Frame 020150/0225 →