Solid-state imaging device and imaging apparatus
View Patent ↗There is provided a solid-state imaging device, including: a semiconductor substrate having a plurality of pixels, each having a photoelectric conversion portion, formed therein; and a laminated film formed on said semiconductor substrate; wherein said laminated film includes a hydrogen desorbing film for desorbing hydrogen, and a hydrogen blocking-off film disposed so as to overlie said hydrogen desorbing film.
1. A solid-state imaging device, comprising:
a semiconductor substrate having a plurality of pixels, each having a photoelectric conversion portion, formed therein; and
a laminated film formed on said semiconductor substrate;
wherein said laminated film includes:
a hydrogen desorbing film consisting of silicon nitride for desorbing hydrogen, and
a hydrogen blocking-off film consisting of silicon nitride disposed so as to overlie said hydrogen desorbing film.
2. The solid-state imaging device according to claim 1 , wherein an opening portion is formed in a film which is interposed between said semiconductor substrate and said hydrogen desorbing film and through which hydrogen hardly permeates.
3. The solid-state imaging device according to claim 1 , wherein a hydrogen permeable film is formed between said semiconductor substrate and said hydrogen desorbing film.
4. The solid-state imaging device according to claim 1 , wherein a hydrogen permeable film is formed between said hydrogen desorbing film and said hydrogen blocking-off film.
5. The solid-state imaging device according to claim 1 , wherein said laminated film has a layer including an electrode film for driving said photoelectric conversion portion in a layer close to said semiconductor substrate, and said hydrogen desorbing film is formed on said layer including said electrode film.
6. An imaging apparatus, comprising:
an imaging portion using a solid-state imaging device;
a control portion for controlling said imaging portion; and
a manipulation portion for manipulating said imaging portion;
said solid-state imaging device includes:
a semiconductor substrate having a plurality of pixels, each having a photoelectric conversion portion, formed therein, and
a laminated film formed on said semiconductor substrate, and
wherein said laminated film includes:
a hydrogen desorbing film consisting of silicon nitride for desorbing hydrogen, and
a hydrogen blocking-off film consisting of silicon nitride disposed so as to overlie said hydrogen desorbing film.
7. The imaging apparatus according to claim 6 , wherein an opening portion is formed in a film which is interposed between said semiconductor substrate and said hydrogen desorbing film and through which hydrogen hardly permeates.
8. The imaging apparatus according to claim 6 , wherein a hydrogen permeable film is formed between said semiconductor substrate and said hydrogen desorbing film.
9. The imaging apparatus according to claim 6 , wherein a hydrogen permeable film is formed between said hydrogen desorbing film and said hydrogen blocking-off film.
10. The imaging apparatus according to claim 6 , wherein said laminated film has a layer including an electrode film for driving said photoelectric conversion portion in a layer close to said semiconductor substrate, and said hydrogen desorbing film is formed on said layer including said electrode film.