Method for producing semiconductor components and thin-film semiconductor component
View Patent ↗The invention relates to a method for producing semiconductor components, wherein a layer composite ( 6 ) containing a semiconductor material is formed on a growth substrate ( 1 ), a flexible carrier layer is applied to the layer composite ( 6 ), the flexible carrier layer is cured to form a self-supporting carrier layer ( 2 ), and the growth substrate ( 1 ) is stripped away. As an alternative, the carrier layer ( 2 ) may have a base layer ( 2 b ) and an adhesion layer ( 2 a ) adhering on the layer composite.
1. A method for producing semiconductor components, comprising the steps of:
forming a layer composite containing a semiconductor material on a growth substrate;
applying a flexible carrier layer to the layer composite;
curing the flexible carrier layer to form a self-supporting carrier layer;
stripping away the growth substrate; and
applying a flexible covering layer comprising a film on a side of the layer composite remote from the flexible covering layer;
wherein the flexible covering layer and the flexible carrier layer remain in the produced semiconductor component.
2. A method for producing semiconductor components, comprising the steps of:
forming a layer composite containing a semiconductor material on a growth substrate;
applying a self-supporting carrier layer to the layer composite, the carrier layer having a base layer and an adhesion layer, which faces the layer composite and which adheres on the layer composite;
stripping away the growth substrate; and
applying a flexible covering layer comprising a film on a side of the layer composite remote from the flexible covering layer;
wherein the flexible covering layer and the flexible carrier layer remain in the produced semiconductor component.
3. The method according to claim 2 , wherein the adhesion layer is formed from a hot melt adhesive.
4. The method according to claim 2 , wherein the base layer is formed from a plastic material.
5. The method according to claim 2 , wherein the flexible carrier layer is a film.
6. The method according to claim 2 , wherein the flexible carrier layer is transparent.
7. The method according to claim 2 , wherein the semiconductor components are thin-film semiconductor components.
8. The method according to claim 2 , wherein the layer composite has an active layer sequence for generating electromagnetic radiation.
9. The method according to claim 2 , wherein the layer composite is structured into individual layer stacks.
10. The method according to claim 1 , wherein the flexible carrier layer contains a plastic material.
11. The method according to claim 10 , wherein the plastic material contains at least one of an epoxy resin, polyethylene terephthalate and polymer.
12. The method according to claim 10 , wherein the plastic material has curing temperatures in the region of 150° C.
13. The method according to claim 2 , wherein the flexible carrier layer has a thickness that is less than or equal to 100 μm.
14. The method according to claim 2 , wherein the flexible carrier layer contains a thermally conductive material.
15. The method according to claim 2 , wherein the flexible carrier layer contains an electrically insulating material.
16. The method according to claim 2 , wherein the flexible carrier layer has at least one electrical conductor track.
17. The method according to claim 2 , wherein the flexible carrier layer has an electrically conductive material.
18. The method according to claim 8 , wherein the layer composite has a first contact metallization on a side facing the flexible carrier layer.
19. The method according to claim 18 , wherein the contact metallization at least partly reflects the electromagnetic radiation generated by the active layer sequence.
20. The method according to claim 2 , wherein the growth substrate is stripped away by a laser stripping method.
21. The method according to claim 2 , wherein the layer composite is provided with a second contact metallization after the growth substrate has been stripped away.
22. The method according to claim 21 , wherein a flexible covering layer is applied to the second contact metallization.
23. The method according to claim 22 , wherein the flexible covering layer is partly or completely cured.
24. The method according to claim 1 , wherein the carrier layer is a film.
25. The method according to claim 1 , wherein the flexible carrier layer is transparent.
26. The method according to claim 1 , wherein the semiconductor components are thin-film semiconductor components.
27. The method according to claim 1 , wherein the layer composite has an active layer sequence for generating electromagnetic radiation.
28. The method according to claim 1 , wherein the layer composite is structured into individual layer stacks.
29. The method according to claim 1 , wherein the flexible carrier layer has a thickness that is less than or equal to 100 μm.
30. The method according to claim 1 , wherein the flexible carrier layer contains a thermally conductive material.
31. The method according to claim 1 , wherein the flexible carrier layer contains an electrically insulating material.
32. The method according to claim 1 , wherein the flexible carrier layer has an electrically conductive material.
33. The method according to claim 1 , wherein the layer composite has a first contact metallization on the side facing the flexible carrier layer.
34. The method according to claim 33 , wherein the contact metallization at least partly reflects the radiation generated by an active layer sequence.
35. The method according to claim 1 , wherein the growth substrate is stripped away by a laser stripping method.
36. The method according to claim 1 , wherein the layer composite is provided with a second contact metallization after the growth substrate has been stripped away.
37. The method according to claim 36 , wherein a flexible covering layer is applied to the second contact metallization.
38. The method according to claim 37 , wherein the flexible covering layer is partly or completely cured.