Silicon-based thin-film photoelectric converter and method of manufacturing the same
View Patent ↗In order to improve photoelectric conversion properties of a silicon-based thin-film photoelectric converter to which a conductive SiO x layer is inserted to obtain an optical confinement effect, the silicon-based thin-film photoelectric converter according to the present invention includes an i-type photoelectric conversion layer of hydrogenated amorphous silicon or an alloy thereof, an i-type buffer layer made of hydrogenated amorphous silicon, and an n-type Si 1-x O x layer (x is 0.25-0.6) stacked successively, wherein the buffer layer has a higher hydrogen concentration at its interface with and as compared with the photoelectric conversion layer and has a thickness of at least 5 nm and at most 50 nm. Accordingly, generation of silicon crystal phase parts and reduction of resistivity are promoted in the n-type Si 1-x O x layer, contact resistance at the interface is reduced, and FF of the photoelectric converter is improved, so that the photoelectric converter achieves improved properties.
1. A silicon-based thin-film photoelectric converter comprising: a transparent substrate; a substantially i-type photoelectric conversion layer of hydrogenated amorphous silicon or a hydrogenated amorphous silicon alloy; a substantially i-type buffer layer mainly made of hydrogenated amorphous silicon; and an n-type Si 1-x O x layer (x is 0.25-0.6) stacked successively,
wherein the buffer layer
has a higher hydrogen concentration at its interface with and as compared with said photoelectric conversion layer,
has a lower hydrogen concentration at its interface with said n-type Si 1-x O x layer, as compared to said photoelectric conversion layer, and
has a thickness of at least 5 nm and at most 50 nm,
wherein the transparent substrate is on a light incident side of the photoelectric conversion layer,
wherein the substantially i-type photoelectric conversion layer, the substantially i-type buffer layer, and the n-type Si 1-x O x layer are stacked successively from the light incident side (transparent substrate side),
wherein said buffer layer has a hydrogen concentration of at least 1×10 22 atoms/cc measured by SIMS at its interface with said photoelectric conversion layer.
2. The silicon-based thin-film photoelectric converter according to claim 1 , wherein said buffer layer includes crystal phase parts at its interface with said n-type Si 1-x O x layer.
3. The silicon-based thin-film photoelectric converter according to claim 1 , wherein said n-type Si 1-x O x layer includes silicon-rich phase parts in its amorphous silicon-oxygen alloy phase.
4. The silicon-based thin-film photoelectric converter according to claim 3 , wherein said silicon-rich phase parts include silicon crystal phase parts.
5. A method of manufacturing the silicon-based thin-film photoelectric converter recited in claim 1 , wherein said buffer layer is formed by using a mixed gas containing at least hydrogen and silane as a source gas with hydrogen/silane flow ratio within a range of 40-300.
6. The method of manufacturing the silicon-based thin-film photoelectric converter according to claim 5 , wherein at least a part of said photoelectric conversion layer and said buffer layer are deposited in the same film-deposition chamber.
7. The silicon-based thin-film photoelectric converter according to claim 1 , wherein said buffer layer has a thickness of not less than 10 nm and at most 50 nm.