MEMORY CONTROLLER, NONVOLATILE STORAGE DEVICE, NONVOLATILE STORAGE SYSTEM, AND DATA WRITING METHOD
Used is a nonvolatile memory such as a multi-level NAND flash memory having memory cells for holding data of a plurality of pages. When the data is to be written in the nonvolatile memory 110 , a physical unit is consisted in units of a plurality of paired pages. When all the physical units cannot be written, the data is copied from an old physical block holding an already written effective data, and is written in a new physical block till the written, from the first section of a new physical unit, so that an error can be prevented.
1 - 38 . (canceled)
39 . A memory controller which executes data writing in a memory, the memory including a plurality of pages, the page being a unit of data writing in the memory, and a physical unit being configured with at least one page group configured with a plurality of pages in which, when data writing is executed in one page, writing status of data to other page changes,
the memory controller comprises:
a page information direction portion storing page information which indicates a priority sequence of the page so as to write data in the pages; and
a physical unit writing portion executing data writing from the page having a higher priority sequence in an unwritten physical unit on a basis of the writing command and the page information.
40 . The memory controller according to claim 39 , wherein
the memory is a nonvolatile memory configured with multi-level memory cells.
41 . The memory controller according to claim 39 , wherein the physical unit is configured with continuous 2n (n=1, 2, . . . ) pages.
42 . The memory controller according to claim 39 , wherein the page information direction portion stores information identifying which pages in a plurality of the pages are included in the physical unit.
43 . The memory controller according to claim 39 , wherein
the physical unit is configured with a plurality of discontinuous pages.
44 . A nonvolatile storage device comprising:
a nonvolatile memory configured with a plurality of pages, the page being a unit of data writing in the memory, a physical unit being configured with at least one page group configured with a plurality of pages in which, when data writing is executed in one page, writing status of data to other page changes; and
a memory controller which executes data writing in the nonvolatile memory including,
a page information direction portion storing page information which indicates a priority sequence of the page so as to write data in the pages, and
a physical unit writing portion executing data writing from the page having a higher priority sequence in an unwritten physical unit on a basis of a writing command and the page information.
45 . The nonvolatile storage device according to claim 44 , wherein
the nonvolatile memory is configured with multi-level memory cells.
46 . The nonvolatile storage device according to claim 44 , wherein
the physical unit is configured with continuous 2n (n=1, 2, . . . ) pages.
47 . The nonvolatile storage device according to claim 44 , wherein
the page information direction portion stores information identifying which pages in a plurality of the pages are included in the physical unit.
48 . The nonvolatile storage device according to claim 44 , wherein
the physical unit is configured with a plurality of discontinuous pages.
49 . A nonvolatile storage system comprising:
an access device transmitting a writing command and data to the nonvolatile storage device; and
a nonvolatile storage device including
a nonvolatile memory configured with a plurality of pages, the page being a unit of data writing in the memory, a physical unit being configured with at least one page group including a plurality of pages in which, when data writing is executed in one page, writing status of data to other page changes, and
a memory controller which executes data writing in the nonvolatile memory, containing,
a page information direction portion storing page information which indicates a priority sequence of the page so as to write data in the pages, and
a physical unit writing portion executing data writing in an unwritten physical unit on a basis of the writing command and the page information.
50 . The nonvolatile storage system according to claim 49 , wherein
the nonvolatile memory is configured with multi-level memory cells.
51 . The nonvolatile storage system according to claim 49 , wherein
the physical unit is configured with continuous 2n (n=1, 2, . . . ) pages.
52 . The nonvolatile storage system according to claim 49 , wherein
the page information direction portion stores information identifying which pages in a plurality of the pages are included in the physical unit.
53 . The nonvolatile storage system according to claim 49 , wherein
the physical unit is configured with a plurality of discontinuous pages.
54 . A data writing method which executes data writing in a memory, the memory including a plurality of pages, the page being a unit of data writing in the memory, a physical unit being configured with at least one page group configured with a plurality of pages in which, when data writing is executed in one page, writing status of data to other page changes,
the data writing method comprises:
writing data from the page having a higher priority in an unwritten physical unit on a basis of a writing command and page information identifying a priority sequence of the page so as to write the data in the pages.
55 . The data writing method according to claim 54 , wherein
the memory is a nonvolatile memory configured with multi-level memory cells.
56 . The data writing method according to claim 54 , wherein
the physical unit is configured with continuous 2n (n=1, 2, . . . ) pages.
57 . The data writing method according to claim 54 , wherein
the physical unit has an area where writing of data is not executed.
58 . The data writing method according to claim 54 , wherein
the physical unit is configured with a plurality of discontinuous pages.