Pixel performance improvement by use of a field-shield
View Patent ↗A pixel cell ( 100 ) and method for making the same for an active matrix display includes a pixel pad ( 110 ) and a thin film field effect transistor ( 106 ) which selectably couples a signal to activate/deactivate the pixel pad. A field shield ( 112 ) is formed on an insulating layer ( 102 ) and connected to the pixel pad through the insulating layer such that the field shield extends over at least a portion of the pixel pad. The field shield may extend over the thin film transistor and form a second gate ( 215 ) used to enhance the performance of the thin film transistor and the pixel cell.
1. A pixel cell for an active matrix display, comprising:
a pixel pad;
a thin film field effect transistor which selectably couples a signal to activate/deactivate the pixel pad; and
a field shield formed on an insulating layer and connected to the thin film field effect transistor passing through the insulating layer such that the field shield extends over at least a portion of an electrode of the pixel cell or at least a portion of the thin film field effect transistor,
wherein the field shield extends over a portion of the pixel pad of an adjacent pixel cell to form a capacitive relationship with a pixel pad of the adjacent pixel cell.
2. The pixel cell as recited in claim 1 , wherein the thin film field effect transistor includes an organic semiconductor material.
3. The pixel cell as recited in claim 1 , wherein the thin film field effect transistor includes an organic interlayer dielectric layer.
4. The pixel cell as recited in claim 1 , wherein the thin film field effect transistor selectively connects a column electrode to the pixel pad in accordance with a signal on a row electrode.
5. The pixel cell as recited in claim 1 , wherein the field shield extends over a portion of the thin film field effect transistor to form a capacitive relationship with the thin film field effect transistor to enhance performance of the transistor.
6. The pixel cell as recited in claim 1 , wherein the field shield extends over a portion of the thin film field effect transistor of an adjacent pixel cell to form a capacitive relationship with a thin film field effect transistor of the adjacent pixel cell to enhance performance of the transistor of the adjacent pixel cell.
7. The pixel cell as recited in claim 1 , wherein the field shield extends over the portion of the pixel pad of the adjacent pixel cell to form the capacitive relationship with the pixel pad of the adjacent pixel cell to thereby enhance performance of the pixel pad of the adjacent pixel cell.
8. A pixel cell for an active matrix display, comprising:
a pixel pad;
a thin film field effect transistor which selectably couples a signal to activate/deactivate the pixel pad; and
a field shield formed on an insulating layer and connected to the thin film field effect transistor through the insulating layer such that the field shield extends over at least a portion of the thin film field effect transistor to form a second gate,
wherein the insulator layer has a different thickness between the field shield and the thin film field effect transistor than between the field shield and another area of the pixel cell.
9. The pixel cell as recited in claim 8 , wherein the thin film field effect transistor includes an organic semiconductor material.
10. The pixel cell as recited in claim 8 , wherein the thin film field effect transistor includes an organic interlayer dielectric layer.
11. The pixel cell as recited in claim 8 , wherein the thin film field effect transistor selectively connects a column electrode to the pixel pad in accordance with a signal on a row electrode.
12. The pixel cell as recited in claim 8 , wherein the insulator layer has a smaller thickness between the field shield and the thin film field effect transistor than between the field shield and another area of the pixel cell.
13. The pixel cell as recited in claim 8 , wherein the second gate formed by the field shield increases on-current for the thin film field effect transistor.