IP Library Granted Patent US 7,821,645
Granted Patent B2
US 7,821,645 · App. 11/994,666 · Granted Oct 26, 2010

Microstructural feature and material property monitoring device for metallic material

Assignee: Toshiba Mitsubishi-Electric Industrial Systems Corporation
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Quick Facts
Patent No.
US 7,821,645
App. No.
11/994,666
Granted
Oct 26, 2010
Kind
B2
Abstract

A microstructural feature and material property monitoring device for a metallic material that can easily adjust relative position between an irradiation position of laser beams applied to the metallic material to propagate pulsed ultrasonic waves in the metallic material and detection position of a laser interferometer, and therefore can accurately monitor the microstructural feature and material property of the metallic material. The device relatively moves the irradiation position of the laser beams generated by a laser oscillator and the detection position of the laser interferometer. The irradiation position of the laser beams generated from a laser oscillator and the detection position of the laser interferometer are controlled to be aligned with a relative position according to the microstructural feature and material property of the metallic material based on the time from the transmission of the pulsed ultrasonic waves to the detection by the laser interferometer. After the alignment, the microstructural feature and material property of the metallic material is calculated based on the waveform of the pulsed ultrasonic waves generated as an electrical signal by the laser interferometer.

Claims (10)

1. A microstructural feature and material property monitoring device for a metallic material, which monitors the microstructural feature and material property of the metallic material, comprising:

a laser oscillator which applies a laser beam to a first surface of the metallic material and induces pulsed ultrasonic waves in and that propagate in the metallic material;

a laser interferometer which detects the pulsed ultrasonic waves that have propagated in the metallic material on a second surface of the metallic material, on a side opposite to the first surface of the metallic material, and transmits the pulsed ultrasonic waves as an electrical signal;

moving means for relatively moving irradiation position of the laser beam generated by the laser oscillator and detection position of the laser interferometer;

control means which aligns the irradiation position of the laser beam generated from the laser oscillator and the detection position of the laser interferometer with a relative position, according to the microstructural feature and material property of the metallic material to be monitored, by controlling the moving means based on time from induction of the pulsed ultrasonic waves until detection by the laser interferometer; and

calculating means which calculates the microstructural feature and material property of the metallic material based on waveform of the pulsed ultrasonic waves detected as an electrical signal by the laser interferometer.

2. The microstructural feature and material property monitoring device for a metallic material according to claim 1 , wherein the control means controls the moving means so that the time from the induction of the pulsed ultrasonic waves to the detection by the laser interferometer is minimized.

3. The microstructural feature and material property monitoring device for a metallic material according to claim 2 , wherein the calculating means calculates crystal grain size of the metallic material based on the waveform of the pulsed ultrasonic waves detected as an electrical signal by the laser interferometer.

4. The microstructural feature and material property monitoring device for a metallic material according to claim 1 , wherein, taking plate thickness of the metallic material as h and angle between irradiation direction of the laser beam generated from the laser oscillator and travel direction of the pulsed ultrasonic waves of a predetermined mode as θ, the control means relatively moves the detection position of the laser interferometer by a predetermined integer multiple of distance htan θ, along the second surface of the metallic material, with respect to the irradiation position of the laser beams generated from the laser oscillator, with the position at which the time from the induction of the pulse ultrasonic waves to the detection the laser interferometer is at a minimum as a reference.

5. The microstructural feature and material property monitoring device for a metallic material according to claim 4 , wherein the calculating means calculates at least one of elasticity constant and Lankford value of the metallic material based on the waveform of the pulsed ultrasonic waves detected as an electrical signal by the laser interferometer.

Assignments (2)
CHANGE OF NAME Recorded Apr 26, 2024
From: TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION
To: TMEIC CORPORATION
Reel/Frame 067244/0359 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 4, 2008
From: SANO, MITSUHIKO; OHARA, KAZUHIRO
To: TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION
Reel/Frame 020316/0936 →
Continuity (1)
Related Publication 20100128281A1 · May 27, 2010