Semiconductor light-emitting device
View Patent ↗A semiconductor light-emitting device 10 has a semiconductor chip 12 for emitting light having a wavelength in blue to ultraviolet regions, and a sealing portion 16 formed in at least a partial region on a passage path on which the light is passed. The sealing portion 16 includes a sealing material 16 d which is a composite material including a matrix material 16 a made of a resin, nano-particles 16 b made of an inorganic material which are distributed in the matrix material 16 a , the nano-particle 16 b having an effective particle size which is ¼ or less of the wavelength of the light in the matrix material 16 a , and a fluorescent material 16 c.
1. A semiconductor light-emitting device comprising:
a semiconductor chip for emitting light; and
a sealing portion formed in at least a partial region on a passage path on which the light is passed,
wherein the sealing portion includes
a sealing material which is a composite material including a matrix material and particles made of an inorganic material which are distributed in the matrix material, the particle having an effective particle size which is ¼ or less of the wavelength of the light in the matrix material,
a refractive index being set to become smaller from an inner region near the semiconductor chip to an outer region, and
a refractive index of the particle included in the inner region is larger than a refractive index of the particle included in the outer region.
2. The semiconductor light-emitting device of claim 1 , wherein
the sealing portion is formed, covering surroundings of the semiconductor chip.
3. The semiconductor light-emitting device of claim 1 , wherein
the sealing portion is formed, contacting the semiconductor chip.
4. The semiconductor light-emitting device of claim 1 , wherein
the sealing portion comprises a first sealing portion made of the sealing material, and a second sealing portion formed outside the first sealing portion and including a fluorescent material.
5. The semiconductor light-emitting device of claim 4 , further comprising:
a reflection member for reflecting the light provided below and lateral to the semiconductor chip in the first sealing portion.
6. The semiconductor light-emitting device of claim 1 , wherein
the sealing portion comprises a first sealing portion including the sealing material, and a second sealing portion formed outside the first sealing portion, and
the particle is made of a material which absorbing light in an ultraviolet region.
7. The semiconductor light-emitting device of claim 1 , wherein
the sealing portion comprises a first sealing portion including the fluorescent material, and a second sealing portion formed outside the first sealing portion and including the sealing material.
8. The semiconductor light-emitting device of claim 4 , wherein
the first sealing portion and the second sealing portion have a hemispherical outer shape.
9. The semiconductor light-emitting device of claim 4 , wherein
the first sealing portion has a cross-section having a quadrangular outer shape, and the second sealing portion has a hemispherical outer shape.
10. The semiconductor light-emitting device of claim 4 , wherein
the first sealing portion and the second sealing portion have a cross-section having a quadrangular outer shape.
11. The semiconductor light-emitting device of claim 4 , wherein
the first sealing portion has a hemispherical outer shape, and the second sealing portion has a cross-section having a quadrangular outer shape.
12. The semiconductor light-emitting device of claim 1 , wherein
a proportion of the particles in the composite material of the sealing portion is higher in the inner region near the semiconductor chip than in the outer region.
13. The semiconductor light-emitting device of claim 1 , wherein
of the particles included in the sealing portion, the particle included in the inner region of the sealing portion and the particle included in the outer region have different compositions.
14. The semiconductor light-emitting device of claim 1 , further comprising:
a paste material having transparency for fixing the semiconductor chip and the holding material,
wherein the paste material includes a composite material including a matrix material and particles made of an inorganic material which are distributed in the matrix material, the particle having an effective particle size which is ¼ or less of the wavelength of the light in the matrix material.
15. The semiconductor light-emitting device of claim 14 , wherein
the particle included in the paste material is made of a material for absorbing light in an ultraviolet region.