Single crystal nitride semiconductor material on conductive substrate using substrate decomposition prevention layer for nitride light emitting device
View Patent ↗A light-emitting device is provided with a substrate decomposition prevention layer using as a matrix at least one selected from the group consisting of boron nitride (B—N), silicon carbide (Si—C), and silicon carbon nitride (Si—C—N), and patterned into a predetermined shape; an n-type nitride clad layer formed on the substrate decomposition prevention layer; a nitride active layer formed on the n-type nitride clad layer; a p-type nitride clad layer formed on the nitride active layer; a p-type ohmic contact layer formed on the p-type nitride clad layer; a p-type electrode pad formed on the p-type ohmic contact layer; an n-type ohmic contact layer electrically connected to the n-type nitride clad layer by means of a patterned region of the substrate decomposition prevention layer; and an n-type electrode pad formed beneath the n-type ohmic contact layer.
1. A light-emitting device comprising:
a substrate decomposition prevention layer using, as a matrix, at least one selected from the group consisting of boron nitride (B—N), silicon carbide (Si—C), and silicon carbon nitride (Si—C—N), and patterned into a predetermined shape;
an n-type nitride clad layer formed on the substrate decomposition prevention layer;
a nitride active layer formed on the n-type nitride clad layer;
a p-type nitride clad layer formed on the nitride active layer;
a p-type ohmic contact layer formed on the p-type nitride clad layer;
a p-type electrode pad formed on the p-type ohmic contact layer;
an n-type ohmic contact layer electrically connected to the n-type nitride clad layer by means of a patterned region of the substrate decomposition prevention layer; and
an n-type electrode pad formed beneath the n-type ohmic contact layer.
2. The light-emitting device of claim 1 , further comprising a nitride buffer layer formed between the substrate decomposition prevention layer and the n-type nitride clad layer.
3. The light-emitting device of claim 1 , wherein the p-type ohmic contact layer includes at least one selected from the group consisting of transparent conductive oxides using ITO, ZnO, SnO 2 , and In 2 O 3 as a matrix; conductive transitional metal nitrides including TiN; and oxidized nickel-gold (Ni—Au) and silver (Ag).
4. The light-emitting device of claim 3 , wherein the p-type electrode pad is composed of a bi-layer of nickel (Ni) and gold (Au) or a bi-layer of silver (Ag) and gold (Au).
5. The light-emitting device of claim 4 , wherein the n-type ohmic contact layer is composed of a bi-layer of aluminum and titanium (Al/Ti).
6. The light-emitting device of claim 5 , wherein the n-type electrode pad includes at least one selected from the group consisting of aluminum (Al), silver (Ag), and rhodium (Rh).
7. The light-emitting device of claim 1 , wherein the n-type ohmic contact layer includes at least one selected from the group consisting of transparent conductive oxides using ITO, ZnO, SnO 2 , and In 2 O 3 as a matrix; conductive transitional metal nitrides including TiN; and oxidized nickel-gold (Ni—Au) and silver (Ag).
8. The light-emitting device of claim 7 , wherein the n-type electrode pad is composed of a bi-layer of nickel (Ni) and gold (Au) or a bi-layer of silver (Ag) and gold (Au).
9. The light-emitting device of claim 8 , wherein the p-type ohmic contact layer is composed of a bi-layer of aluminum and titanium (Al/Ti).
10. The light-emitting device of claim 9 , wherein the p-type electrode pad includes at least one selected from the group consisting of aluminum (Al), silver (Ag), and rhodium (Rh).
11. The light-emitting device of claim 1 , wherein the substrate decomposition prevention layer includes at least one additive selected from the group consisting of oxides or nitrogen oxides of elements including silicon (Si), germanium (Ge), indium (In), lithium (Li), gallium (Ga), magnesium (Mg), zinc (Zn), beryllium (Be), molybdenum (Mo), vanadium (V), copper (Cu), iridium (Ir), rhodium (Rh), ruthenium (Ru), tungsten (W), cobalt (Co), nickel (Ni), manganese (Mn), titanium (Ti), tantalum (Ta), chromium (Cr), and lanthanum (La).
12. The light-emitting device of claim 11 , wherein an amount of the additive in the substrate decomposition prevention layer ranges from 0.1 wt % to 49 wt %.
13. The light-emitting device of claim 12 , wherein the substrate decomposition prevention layer has a thickness of 3 nanometers to 10 micrometers.
14. The light-emitting device of claim 13 , wherein the substrate decomposition prevention layer includes a bi-layer of a lower layer and an upper layer, the lower layer including boron nitride (B—N), silicon carbide (Si—C), or silicon carbon nitride (Si—C—N) as a matrix, and the upper layer being composed of silicon carbide (SiC).
15. A light-emitting device comprising:
a supporting substrate;
a p-type ohmic contact layer formed on the supporting substrate and reflecting the light;
a p-type nitride clad layer formed on the p-type ohmic contact layer;
a nitride active layer formed on the p-type nitride clad layer;
an n-type nitride clad layer formed on the nitride active layer;
a transparent n-type ohmic contact layer formed on the n-type nitride clad layer; and,
an n-type electrode pad formed on the n-type ohmic contact layer,
wherein the transparent n-type ohmic contact layer includes at least one selected from the group consisting of transparent conductive oxides made of at least one of ITO, ZnO, SnO 2 , and In 2 O 3 ; conductive transitional metal nitrides including TiN; and oxidized nickel-gold (Ni—Au) and silver (Ag), and
wherein the n-type electrode pad is a bi-layer consisting of nickel (Ni) layer and gold (Au) layer or a bi-layer consisting of a silver (Ag) layer and a gold (Au) layer.
16. The light-emitting device of claim 15 , wherein the n-type ohmic contact layer is composed of a bi-layer of aluminum and titanium (Al/Ti).