Photopolymer-based dielectric materials and methods of preparation and use thereof
View Patent ↗Photopolymer-based dielectric materials are provided with methods for preparing the same. Composites and electronic devices including such dielectric materials also are provided.
1. An electronic device comprising a semiconductor component in contact with a polymeric material, the polymeric material comprising a photocrosslinked product of a random copolymer selected from:
wherein m and n independently are a real number, wherein 0<m<1, 0<n<1, and m +n=1.
2. An electronic device comprising a semiconductor component in contact with a polymeric material, the polymeric material comprising a photocrosslinked product of a random copolymer selected from:
wherein m and n are independently a real number, wherein 0<m≦1, 0<n<1, and m+n=1.
3. The device of claim 1 , wherein the semiconductor component comprises an organic semiconductor compound.
4. The device of claim 1 , wherein the semiconductor component comprises an inorganic semiconductor material.
5. The device of claim 1 , wherein the device is an organic field effect transistor (OFET).
6. The device of claim 5 , wherein the device is selected from a top-contact bottom-gate OFET, a bottom-contact bottom-gate OFET, a bottom-contact top-gate OFET, and a top-contact top-gate OFET.
7. The device of claim 2 , wherein the polymeric material comprises a photocrosslinked product of a homopolymer of the repeating unit:
8. An electronic device comprising a semiconductor component in contact with a polymeric material, wherein the polymeric material comprises a photocrosslinked product of a homopolymer of the repeating units:
9. The device of claim 2 , wherein the polymeric material comprises a photocrosslinked product of a homopolymer of the repeating units:
10. The device of claim 1 , wherein the semiconductor component comprises a solution-processed semiconductor layer.
11. The device of claim 1 , wherein the semiconductor component comprises a vapor-deposited semiconductor layer.
12. The device of claim 1 comprising the semiconductor component deposited on the polymeric material.
13. The device of claim 1 comprising the polymeric material deposited on the semiconductor component.
14. The device of claim 1 , wherein the polymeric material comprises a photocrosslinked product of a copolymer selected from:
15. The device of claim 1 , wherein the polymeric material comprises a photocrosslinked product of a copolymer selected from:
16. The device of claim 2 , wherein the polymeric material comprises a photocrosslinked of a random copolymer selected from:
wherein m and n are independently a real number, wherein 0<m≦1, 0<n<1, and m+n=1.
17. The device of claim 2 , wherein the polymeric material comprises a photocrosslinked product of the copolymer:
18. The device of claim 2 , wherein the semiconductor component comprises an organic semiconductor compound.
19. The device of claim 2 , wherein the semiconductor component comprises an inorganic semiconductor material.
20. The device of claim 2 , wherein the device is an organic field effect transistor (OFET).
21. The device of claim 20 , wherein the device is selected from a top-contact bottom-gate OFET, a bottom-contact bottom-gate OFET, a bottom-contact top-gate OFET, and a top-contact top-gate OFET.
22. The device of claim 2 , wherein the semiconductor component comprises a solution-processed semiconductor layer.
23. The device of claim 2 , wherein the semiconductor component comprises a vapor-deposited semiconductor layer.
24. The device of claim 2 comprising the semiconductor component deposited on the polymeric material.
25. The device of claim 2 comprising the polymeric material deposited on the semiconductor component.