Method of manufacturing thin film transistor and method of manufacturing liquid crystal display device using the same

1. A method of manufacturing a thin film transistor, the method comprising:

forming a gate insulating layer on a substrate having a gate electrode;

forming a semiconductor layer of nanomaterial on the gate insulating layer;

forming a source electrode and a drain electrode on the gate insulating layer; and

applying a voltage to the source electrode and the drain electrode to arrange a direction of the nanomaterial,

wherein the nanomaterial includes a nanowire,

wherein a major axis of the nanowire is arranged according to a direction of an electric field between the source electrode and the drain electrode,

wherein the step of forming the semiconductor layer of nanomaterial on the gate insulating layer includes:

forming a self-assembled monolayer having a first polarity charge on the gate insulating layer; and

dropping the nanomaterial on the substrate having the self-assembled monolayer, the nanomaterial having a second polarity charge,

wherein the first polarity charge is positive and the second polarity charge is negative,

wherein the self-assembled monolayer includes an —NH2 group,

wherein the step of forming the self-assembled monolayer having the first polarity charge on the gate insulating layer includes:

projecting a deep-ultraviolet on a mask to leave the self-assembled monolayer on a region where the semiconductor layer is formed.

2. The method of claim 1 , wherein the self-assembled monolayer is formed by vapor phase reaction.

3. A method of manufacturing a liquid crystal display device, the method comprising:

forming a gate electrode and a gate line on a substrate;

forming a gate insulating layer on the substrate having the gate electrode;

forming a semiconductor layer of nanomaterial on the gate insulating layer;

forming a source electrode and a drain electrode on the gate insulating layer;

applying a voltage to the source electrode and the drain electrode to arrange a direction of the nanomaterial;

forming a passivation layer on the substrate having the source electrode and the drain electrode, the passivation layer having a contact hole exposing the drain electrode; and

forming a pixel electrode on the passivation layer, the pixel electrode connecting to the drain electrode,

wherein the nanomaterial includes a nanowire,

wherein a major axis of the nanowire is arranged according to a direction of an electric field between the source electrode and the drain electrode,

wherein the step of forming the semiconductor layer of nanomaterial on the gate insulating layer includes:

forming a self-assembled monolayer having a first polarity charge on the gate insulating layer; and

dropping the nanomaterial on the substrate having the self-assembled monolayer, the nanomaterial having a second polarity charge,

wherein the first polarity charge is positive and the second polarity charge is negative,

wherein the self-assembled monolayer includes an —NH2 group,

wherein the step of forming the self-assembled monolayer having the first polarity charge on the gate insulating layer includes:

projecting a deep-ultraviolet on a mask to leave the self-assembled monolayer on a region where the semiconductor layer is formed.