Superabrasive compact including diamond-silicon carbide composite, methods of fabrication thereof, and applications therefor
View Patent ↗Embodiments of the present invention relate to diamond-silicon carbide composites, superabrasive compacts including such diamond-silicon carbide composites, and methods of fabricating such diamond-silicon carbide composites and superabrasive compacts. In one embodiment, a superabrasive compact includes a substrate and a superabrasive table bonded to the substrate. The superabrasive table comprises diamond-silicon carbide composite including a matrix comprising nanometer-sized silicon carbide grains and micrometer-sized diamond grains dispersed through the matrix. In another embodiment, a method of fabricating a superabrasive compact is disclosed. An assembly comprising a mixture including diamond particles and silicon is formed. The silicon comprises amorphous silicon, crystalline silicon crystallized from amorphous silicon formed by a milling process, or combinations thereof. A substrate is positioned in proximity to the mixture. The assembly is subjected to heat and pressure to form a superabrasive compact comprising a superabrasive table bonded to the substrate. The superabrasive table comprises diamond-silicon carbide composite including diamond grains dispersed through a matrix of silicon carbide grains.
1. A superabrasive compact, comprising:
a substrate;
a superabrasive table, the superabrasive table comprising diamond-silicon carbide composite including:
a matrix including nanometer-sized silicon carbide grains; and
micrometer-sized diamond grains dispersed through the matrix; and
at least one polycrystalline diamond layer disposed between the substrate and the superabrasive table, the at least one polycrystalline diamond layer including a plurality of bonded-together diamond grains that exhibit diamond-to-diamond bonding therebetween and defining a plurality of interstitial regions, at least a portion of the interstitial regions including a metal-solvent catalyst disposed therein.
2. The superabrasive compact of claim 1 wherein:
the micrometer-sized diamond grains exhibit an average grain size of at least about 1 μ; and
the nanometer-sized silicon carbide grains exhibit an average grain size of about 10 nm to about 500 nm.
3. The superabrasive compact of claim 2 wherein the matrix comprises nanometer-sized diamond grains dispersed through the matrix, the nanometer-sized diamond grains exhibiting an average grain size of about 10 nm to about 500 nm.
4. The superabrasive compact of claim 3 wherein the nanometer-sized silicon carbide grains and the nanometer-sized diamond grains exhibit an average grain size of about 50 nm to about 200 nm.
5. The superabrasive compact of claim 2 wherein the nanometer-sized silicon carbide grains exhibit an average grain size of about 50 nm to about 200 nm.
6. The superabrasive compact of claim 1 , further comprising:
a barrier layer disposed between the at least one polycrystalline diamond layer and the superabrasive table.
7. The superabrasive compact of claim 6 wherein an interface between the barrier layer and the substrate exhibits a selected non-planar topography.
8. The superabrasive compact of claim 6 wherein the barrier layer comprises a refractory metal or a carbide material.
9. The superabrasive compact of claim 6 wherein the barrier layer comprises tantalum, tungsten, niobium, molybdenum, titanium, or alloys thereof.
10. The superabrasive compact of claim 1 wherein the matrix comprises a toughening constituent dispersed therethrough.
11. The superabrasive compact of claim 10 wherein the toughening constituent comprises ceramic particles.
12. The superabrasive compact of claim 11 wherein the ceramic particles comprises silicon nitride particles, aluminum oxide particles, boron oxide particles, iron oxide particles, yttrium oxide particles, zinc oxide particles, zirconium oxide particles, and combinations thereof.
13. The superabrasive compact of claim 10 wherein the toughening constituent comprises elongated alpha silicon carbide grains at least partially surrounded by the nanometer-sized silicon carbide grains.
14. The superabrasive compact 1 wherein the substrate comprises a cemented carbide material.
15. The superabrasive compact of claim 1 wherein the substrate comprises a binderless carbide material.
16. A superabrasive compact, comprising:
a substrate; and
a superabrasive table bonded to the substrate, the superabrasive table comprising diamond-silicon carbide composite including:
a matrix including nanometer-sized beta silicon carbide grains, the matrix including alpha silicon carbide grains present in an amount of about 1 weight percent to about 20 weight percent of the superabrasive table; and
micrometer-sized diamond grains dispersed through the matrix.
17. A superabrasive compact, comprising:
a substrate; and
a superabrasive table comprising diamond-silicon carbide composite including:
a matrix including nanometer-sized silicon carbide grains; and
micrometer-sized diamond grains dispersed through the matrix; and
at least one transition layer disposed between the substrate and the superabrasive table, the at least one transition layer comprising carbide particles and diamond grains, the at least one transition layer exhibiting a coefficient of thermal expansion that is less than a coefficient of thermal expansion of the substrate and greater than a coefficient of thermal expansion of the superabrasive table.
18. The superabrasive compact of claim 17 wherein the carbide particles and the diamond grains of the at least one transition layer are cemented together with a binder.
19. The superabrasive compact of claim 18 wherein:
the carbide particles comprise tungsten-carbide particles; and
the binder comprises cobalt.
20. The superabrasive compact of claim 17 wherein the at least one transition layer comprises:
a first transition layer positioned adjacent to the substrate; and
a second transition layer positioned adjacent to the superabrasive table, the first transition layer exhibiting a higher concentration of the carbide particles than that of the second transition layer.