Liquid crystal display with photosensor and method of fabricating the same
View Patent ↗A liquid crystal display device comprises a liquid crystal panel including first and second substrates bonded to each other with a liquid crystal layer positioned therebetween, and the photosensor, formed on the second substrate, for sensing an external light from the surroundings, wherein the photosensor includes a semiconductor layer formed on the second substrate and provided with n + -type ion implantation region, ion non-implantation region and lightly doped region; an insulation film, formed on the second substrate, for covering the semiconductor layer; a passivation film, formed on the second substrate, for covering the insulation film; a first contact hole passing through the insulation film and the passivation film, to expose source and drain regions of the semiconductor layer; source and drain electrodes connected with the source and drain regions of the semiconductor layer through the first contact hole; an ion implanting prevention film formed on the insulation film and overlapped with the ion non-implantation region; and a second contact hole passing through the passivation film and the ion implanting prevention film above the ion non-implantation region, so as to provide the external light to the ion non-implantation region.
1. A liquid crystal display device with a photosensor comprising:
a liquid crystal panel including first and second substrates bonded to each other with a liquid crystal layer positioned therebetween, and the photosensor, formed on the second substrate, for sensing an external light from the surroundings,
wherein the photosensor includes:
a semiconductor layer formed on the second substrate and provided with n + -type ion implantation region, ion non-implantation region and lightly doped region;
an insulation film, formed on the second substrate, for covering the semiconductor layer;
a passivation film, formed on the second substrate, for covering the insulation film;
a first contact hole passing through the insulation film and the passivation film, to expose source and drain regions of the semiconductor layer;
source and drain electrodes connected with the source and drain regions of the semiconductor layer through the first contact hole;
an ion implanting prevention film formed on the insulation film and overlapped with the ion non-implantation region; and
a second contact hole passing through the passivation film and the ion implanting prevention film above the ion non-implantation region, so as to provide the external light to the ion non-implantation region.
2. The device of claim 1 , wherein the central portion of the ion implanting prevention film is removed on the process of forming the second contact hole.
3. The device of claim 1 , wherein the ion implanting prevention film is removed partially such that the ion implanting prevention film remains only at one lower edge of the second contact hole corresponding to the n + -type ion implantation region when forming the second contact hole.
4. The device of claim 1 , wherein the ion implanting prevention film and a gate electrodes of the liquid crystal panel are formed of the same material.
5. A liquid crystal display device with a photosensor comprising:
a liquid crystal panel including first and second substrates bonded to each other with a liquid crystal layer positioned therebetween, and the photosensor, formed on the second substrate, for sensing an external light,
wherein the photosensor includes:
a semiconductor layer formed on the second substrate and provided with n + -type ion implantation region, ion non-implantation region and lightly doped region;
an insulation film, formed on the second substrate, for covering the semiconductor layer;
first and second auxiliary patterns formed on the insulation film adjacent to the semiconductor layer;
a passivation film, formed on the second substrate, for covering the first and second auxiliary patterns and the insulation film;
a first contact hole passing through the insulation film and the passivation film, to expose source and drain regions of the semiconductor layer;
source and drain electrodes connected with the source and drain regions of the semiconductor layer through the first contact hole, and overlapped with the first and second auxiliary patterns;
first and second auxiliary capacitors formed in the portions respectively overlapped between the source and drain electrodes and the first and second auxiliary patterns;
an ion implanting prevention film formed on the insulation film and overlapped with the ion non-implantation region; and
a second contact hole passing through the passivation film and the source and drain electrodes above the ion non-implantation region and formed by removing some or entire portions of the ion implanting prevention film, so as to provide the external light to the ion non-implantation region.
6. The device of claim 5 , wherein the central portion of the ion implanting prevention film is removed on the process of forming the second contact hole.
7. The device of claim 5 , wherein the ion implanting prevention film is removed partially such that the ion implanting prevention film remains only at one lower edge of the second contact hole corresponding to the n + -type ion implantation region when forming the second contact hole.
8. The device of claim 5 , wherein the ion implanting prevention film and a gate electrodes of the liquid crystal panel are formed of the same material.