Method of producing semiconductor device
A method of producing a semiconductor device includes the steps of: introducing a p-type impurity corresponding to a conductive type of a channel area into a channel forming area; introducing fluorine into the channel forming area at a low acceleration voltage; and thermally processing a substrate to increase a threshold voltage. In the method of the present invention, the step of thermally processing the substrate is performed after the steps of introducing the p-type impurity into the channel forming area and introducing fluorine into the channel forming area. Further, the steps of introducing the p-type impurity into the channel forming area and introducing fluorine into the channel forming area may be performed any order.
1 . A method of producing a semiconductor device, comprising the steps of:
introducing a p-type impurity corresponding to a conductive type of a channel area into a channel forming area;
introducing fluorine into the channel forming area at a low acceleration voltage; and
thermally processing a substrate to increase a threshold voltage.
2 . The method of producing a semiconductor device according to claim 1 , where, in the step of introducing the p-type impurity, the p-type impurity is introduced at a concentration so that partial depletion does not occur.
3 . The method of producing a semiconductor device according to claim 1 , where, in the step of introducing fluorine, fluorine is introduced at a concentration in a range between 5E13 cm −2 and 5E14 cm −2 .