Method of forming a thin film pattern and method of fabricating a liquid crystal display device

1. A method of fabricating a LCD device, comprising:

preparing a thin film transistor substrate and a color filter substrate,

wherein the preparing at least one of the thin film transistor substrate and the color filter substrate includes the steps of:

providing a printing roller;

coating the printing roller with an etch-resist solution including a base polymer, a carrier solvent, a tackifier and a surfactant;

removing the carrier solvent from the coated etch-resist solution thereby transitioning the etch-resist solution from liquid phase to solid phase;

patterning the solid etch-resist;

transferring the patterned etch-resist from the printing roller to the substrate; and

patterning a thin film of the substrate corresponding to the transferred etch-resist; and

providing a liquid crystal layer between the thin film transistor substrate and color filter substrate;

bonding the thin film transistor substrate and the color filter substrate; and

wherein the tackifier is used polyhydroxystyrene (PHS) having a plurality of hydroxyl (OH − ) groups and the PHS is combined with a hydroxyl group of the base polymer to form a hydrogen bond.

2. The method of claim 1 , wherein the thin film pattern is at least one of a gate electrode, a source electrode, a drain electrode, and a pixel electrode of the thin film transistor substrate.

3. The method of claim 1 , wherein the thin film pattern is at least one of a light-shielding layer and a color filter layer of the color filter substrate.

4. The method of claim 1 , wherein the printing roller includes a blanket around the printing roller.

5. The method of claim 1 wherein patterning the solid etch-resist includes:

providing a printing plate including a groove and a protrusion; and

rotating the printing roller, while allowing the solid etch-resist to be in contact with the protrusion of the printing plate, to transfer the solid etch-resist to the protrusion.

6. The method of claim 1 , wherein transferring the patterned etch-resist from the printing roller to the substrate includes:

rotating the printing roller, while allowing the patterned etch-resist to be in contact with the substrate, to transfer the solid etch-resist to the substrate.

7. The method of claim 1 , wherein patterning the thin film corresponding to the transferred etch-resist includes:

etching the thin film where the etch-resist pattern does not overlap with the thin film; and

removing the etch-resist pattern.

8. The method of claim 1 , wherein the tackifier is included in an amount of about 10 to about 50 vol % of the etch-resist solution.

9. A method of forming a thin film pattern comprising:

providing a printing roller and a substrate including a thin film;

coating the printing roller with an etch-resist solution including a base polymer, a carrier solvent, a tackifier and a surfactant;

removing the carrier solvent from the coated etch-resist solution thereby transitioning the etch-resist solution from liquid phase to solid phase;

patterning the solid etch-resist;

transferring the patterned etch-resist from the printing roller to the substrate;

patterning the thin film corresponding to the transferred etch-resist; and

wherein the tackifier is used polyhydroxystyrene (PHS) having a plurality of hydroxyl (OH − ) groups and the PHS is combined with a hydroxyl group of the base polymer to form a hydrogen bond.

10. The method of claim 9 , wherein the printing roller includes a blanket around the printing roller.

11. The method of claim 9 , wherein patterning the solid etch-resist includes:

providing a printing plate including a groove and a protrusion; and

rotating the printing roller, while allowing the solid etch-resist to be in contact with the protrusion of the printing plate, to transfer the solid etch-resist to the protrusion.

12. The method of claim 9 , wherein transferring the patterned etch-resist from the printing roller to the substrate includes:

rotating the printing roller, while allowing the patterned etch-resist to be in contact with the substrate, to transfer the solid etch-resist to the substrate.

13. The method of claim 9 , wherein patterning the thin film corresponding to the transferred etch-resist includes:

etching the thin film where the etch-resist pattern does not overlap with the thin film; and

removing the etch-resist pattern.

14. The method of claim 9 , wherein the carrier solvent includes at least one of methanol, ethanol, isopropanol, butanol and a combination thereof.

15. The method of claim 9 , wherein the carrier solvent is included in an amount of about 50 to about 90 vol % of the etch-resist solution.

16. The method of claim 9 , wherein the base polymer includes at least one of meta-cresol, novolac, para-cresol novolac, xylenol, trimethylphenol (TMP) and a combination thereof.

17. The method of claim 9 , wherein the base polymer is included in an amount of about 3 to about 30 wt % of the etch-resist solution.

18. The method of claim 9 , wherein the tackifier is included in an amount of about 10 to about 50 vol % of the etch-resist solution.

19. The method of claim 9 , wherein the surfactant includes at least one of acid, sulfonate, phosphate ester, FOS-100(CF 3 (CF 2 ) 4 (CH 2 CH 2 O) 10 ), FSN-100(CF 3 (CF 2 ) 5 (CH 2 CH 2 O) 14 ) and a combination thereof.

20. The method of claim 9 , wherein the surfactant is included in an amount of about 0.001 to about 3 wt % of the etch-resist solution.

21. The method of claim 9 , wherein the etch-resist solution further includes a dye.

22. The method of claim 21 , wherein the dye includes at least one of dimethyl amino-phenyl and ethyl amino-phenyl.

23. The method of claim 9 , wherein the etch-resist solution includes about 3 to about 30 wt % of the base polymer, about 50 to about 90 vol % of the carrier solvent, about 10 to about 50 vol % of the tackifier, about 0.01 to about 3 wt % of the surfactant and about 0.01 to about 1 wt % of a dye.