IP Library › Granted Patent US 7,911,035
Granted Patent B2
US 7,911,035 · App. 12/003,988 · Granted Mar 22, 2011

Directionally controlled growth of nanowhiskers

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Quick Facts
Patent No.
US 7,911,035
App. No.
12/003,988
Granted
Mar 22, 2011
Kind
B2
Abstract

Nanowhiskers are grown in a non-preferential growth direction by regulation of nucleation conditions to inhibit growth in a preferential direction. In a preferred implementation, <001> III-V semiconductor nanowhiskers are grown on an (001) III-V semiconductor substrate surface by effectively inhibiting growth in the preferential <111>B direction. As one example, <001> InP nano-wires were grown by metal-organic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy revealed wires with nearly square cross sections and a perfect zincblende crystalline structure that is free of stacking faults.

Claims (24)

1. A structure comprising: a substrate having a major surface defined by a predetermined crystal plane; and at least one nanowhisker having a base portion and a tip portion located at an opposite end of the nanowhisker from the base portion, the nanowhisker extending from the surface in a single direction from base to tip, the single direction corresponding to the crystal plane, wherein said direction is a non-preferential direction of growth for the nanowhisker.

2. A structure according to claim 1 , wherein said nanowhisker comprises a III-V semiconductor compound.

3. A structure according to claim 2 , wherein indium is a group III constituent of the semiconductor compound.

4. A structure according to claim 1 , wherein the substrate comprises a III-V semiconductor compound.

5. A structure according to claim 4 , wherein the group III part of the compound includes indium.

6. A structure according to claim 1 , wherein the nanowhisker is substantially rectangular in cross-section.

7. A structure according to claim 1 , wherein substantially the entire length of the nanowhisker extends in said direction corresponding to the crystal plane.

8. A structure comprising: a substrate of a semiconductor material having a surface providing an (001) crystal plane; and at least one nanowhisker having at least a base portion of a III-V semiconductor material extending from the surface in an <001> direction relative to the surface, wherein the <001> direction is a non-preferential direction of growth for the nanowhisker, and wherein the base portion is immediately adjacent to the substrate surface.

9. A structure according to claim 8 , wherein substantially the entire length of the nanowhisker extends in said <001> direction.

10. A structure comprising a substrate of semiconductor material having an (001) surface, and at least one nanowhisker, having at least a base portion including a III-V semiconductor material extending from the substrate surface in an <001> direction relative to the substrate surface, and a layer of passivating material disposed on the substrate surface, wherein the base portion is immediately adjacent to the substrate surface.

11. A structure according to claim 10 , wherein substantially the entire length of the nanowhisker extends in said <001> direction.

12. A structure comprising a substrate having a major surface defined by a predetermined crystal facet, and at least one nanowhisker having a base portion and a tip portion located at an opposite end of the nanowhisker from the base portion, the nanowhisker extending from said surface in a single direction from base to tip, the single direction corresponding to said crystal facet and which is a non-preferential direction of growth for the nanowhisker, and a layer of passivating material disposed on the substrate surface.

13. A structure according to claim 12 , wherein said nanowhisker comprises a III-V semiconductor compound.

14. A structure according to claim 13 , wherein indium is a group III constituent of the semiconductor compound.

15. A structure according to claim 13 , wherein the nanowhisker has a substantially rectangular cross-section.

16. A structure according to claim 13 , wherein the passivating material is formed of a thin layer of a carbon-containing material.

17. A structure according to claim 12 , wherein substantially the entire length of the nanowhisker extends in said direction corresponding to the crystal facet.

18. A structure comprising a semiconductor nanowhisker having at least a base portion extending in a <001> direction from a (001) semiconductor surface, facet or substrate, wherein the base portion is immediately adjacent to the semiconductor surface, facet or substrate.

19. A structure according to claim 18 , wherein the nanowhisker comprises a III-V semiconductor compound.

20. A structure according to claim 19 , wherein indium comprises a group III constituent of the semiconductor compound.

21. A structure according to claim 18 , wherein the substrate comprises a III-V semiconductor compound.

22. A structure according to claim 18 , wherein substantially the entire length of the nanowhisker extends in said <001> direction.

23. A structure according to claim 18 , wherein the <001> direction comprises a direction normal to the (001) semiconductor surface, facet or substrate.

24. A structure according to claim 18 , wherein the <001> direction comprises a non-preferential growth from the (001) semiconductor surface, facet or substrate.