Method of manufacturing a semiconductor device
View Patent ↗After a gate electrode is formed on a main surface of a semiconductor substrate, low concentration layers are formed on the main surface of the semiconductor substrate by implanting impurities therein, with using the gate electrode as a mask. Thereafter, first sidewalls and second sidewalls are formed on the both side surfaces of the gate electrode. Subsequently, nitrogen or the like is ion-implanted into the semiconductor substrate, with using the first sidewalls, the second sidewalls and the gate electrode as a mask, thereby forming a crystallization-control region (CCR) on the main surface of the semiconductor substrate. Then, after the second sidewalls are removed, high concentration layers for a source and a drain are formed on the main surface of the semiconductor substrate.
1. A method of manufacturing a semiconductor device, comprising the steps of:
forming a gate insulator film on a (100) plane of a semiconductor substrate;
forming a gate electrode on the gate insulator film;
forming a first gate film on a side of the gate electrode;
forming a second gate film on the first gate film;
implanting one of nitrogen, oxygen, carbon or argon as a first impurity into the semiconductor substrate, using the second gate film as a mask;
removing the second gate film;
implanting a second impurity into the semiconductor substrate, using the first gate film as a mask, wherein the implantation depth of the second impurity is greater than the implantation depth of the first impurity; and
crystallizing the semiconductor substrate implanted with the first impurity or the second impurity.
2. The method of manufacturing a semiconductor device according to claim 1 ,
wherein the second impurity is one of boron, arsenic, or phosphorous.
3. The method of manufacturing a semiconductor device according to claim 1 ,
wherein the semiconductor substrate includes an SiGe layer.
4. The method of manufacturing a semiconductor device according to claim 1 ,
wherein the region in which the second impurity is implanted is to be a source or a drain, and
a direction from the source to the drain is parallel to a <110> direction.
5. A method of manufacturing a semiconductor device, comprising the steps of:
forming a gate insulator film on a (100) plane of a semiconductor substrate;
forming a gate electrode on the gate insulator film;
forming a first gate film on a side of the gate electrode;
implanting one of nitrogen, oxygen, carbon or argon as a first impurity into the semiconductor substrate, using the first gate film as a mask;
implanting a second impurity into a larger region than the region in which the first impurity is implanted in the semiconductor substrate; and
crystallizing the semiconductor substrate implanted with the first impurity or the second impurity.
6. The method of manufacturing a semiconductor device according to claim 5 ,
wherein the second impurity is one of boron, arsenic, or phosphorous.
7. The method of manufacturing a semiconductor device according to claim 5 ,
wherein the semiconductor substrate includes an SiGe layer.
8. The method of manufacturing a semiconductor device according to claim 5 ,
wherein the region in which the second impurity is implanted is to be a source or a drain, and
a direction from the source to the drain is parallel to a <110> direction.