Liquid crystal display device
View Patent ↗A method of fabricating a liquid crystal display device includes forming a data bus line on a substrate, forming a preliminary interlayer insulating layer having a first thickness on the substrate including the data bus line, forming an interlayer insulating layer by etching the preliminary interlayer insulating layer to a second thickness less than the first thickness, the interlayer insulating layer having a planarized surface, sequentially forming a semiconductor layer, a gate insulating layer, and a gate electrode on the interlayer insulating layer, forming a passivation layer on the substrate, forming a plurality of contact holes exposing portions of the data bus line and the semiconductor layer by etching portions of the passivation layer, and forming a pixel electrode on the passivation layer.
1. liquid crystal display device, comprising:
a substrate;
a data bus line formed on the substrate;
an interlayer insulating layer formed on the data bus line and the substrate;
a semiconductor layer formed on the interlayer insulating layer;
a gate insulating layer formed on the semiconductor layer;
a gate electrode formed on the gate insulating layer above the semiconductor layer;
a passivation layer formed on the gate electrode and the gate insulating layer, the passivation layer having a plurality of contact holes exposing portions of the data bus line and the semiconductor layer;
a metal film formed on the data bus line and the semiconductor layer within the contact holes; and
a pixel electrode formed on the passivation layer and electrically connected to the metal film within one of the contact holes on the semiconductor layer,
wherein the interlayer insulating layer has a height similar to a peripheral region.
2. he device according to claim 1 , wherein the interlayer insulating layer includes at least one selected from a group consisting of SOG (Spin on glass), SiNx, SiOx, and PE-oxide.
3. The device according to claim 1 , wherein the plurality of contact holes include a first contact hole that exposes a portion of the data bus line, and second and third contact holes that expose portions of the semiconductor layer.
4. The device according to claim 3 , wherein the metal film includes an oxidation-resistant material.
5. The device according to claim 4 , wherein the metal film includes one selected from a group consisting of Cr, Mo, W, Ti-based material, and an aluminum alloy.