Magnetic head using a synthetic ferri free structure
View Patent ↗Embodiments of the present invention help to reduce mag-noise in a magnetoresistive head without deterioration in reproduced output and improve the signal/noise ratio (SNR) of the magnetoresistive head. According to one embodiment, the magnetoresistive head uses a synthetic ferri free layer and it is arranged such that the magnetic field which is applied to an end of a free layer with smaller film thickness and saturation magnetization in the track width direction by a coupling field is larger than the magnetic field which is applied to it by a bias layer.
1. A magnetic head characterized by comprising:
a ferromagnetic pinned layer;
a ferromagnetic free layer;
a nonmagnetic interlayer provided between the ferromagnetic pinned layer and the ferromagnetic free layer;
bias layers provided at both sides of the ferromagnetic free layer in a track width direction such that an upper surface of the bias layers at ends thereof adjacent the ferromagnetic free layer are higher in a film thickness direction than an upper surface of the ferromagnetic free layer;
wherein
the ferromagnetic free layer has a synthetic ferri free structure in which a first ferromagnetic layer and a second ferromagnetic layer larger in product of magnetization and film thickness than the first ferromagnetic layer are magnetically anti-parallelly coupled through a free layer anti-parallel coupling layer;
stripe height and track width, defined as widths in respective directions of the ferromagnetic free layer, are substantially equal in length; and
a magnetic field applied to the first ferromagnetic layer by exchange coupling through the free layer anti-parallel coupling layer is larger than a bias field applied from the bias layer to an end of the first ferromagnetic layer in the track width direction.
2. The magnetic head as described in claim 1 , characterized by having a CPP structure in which sense current is applied in a thin film thickness direction.
3. A magnetic head characterized by comprising:
a ferromagnetic pinned layer;
a ferromagnetic free layer;
a nonmagnetic interlayer provided between the ferromagnetic pinned layer and the ferromagnetic free layer;
bias layers provided at both sides of the ferromagnetic free layer in a track width direction such that an upper surface of the bias layers at ends thereof adjacent the ferromagnetic free layer are higher in a film thickness direction than an upper surface of the ferromagnetic free layer;
wherein
the ferromagnetic free layer has a synthetic ferri free structure in which a first ferromagnetic layer and a second ferromagnetic layer larger in product of magnetization and film thickness than the first ferromagnetic layer are magnetically anti-parallelly coupled through a free layer anti-parallel coupling layer;
ratio of stripe height and track width is 0.7 or more and 2 or less; and
a magnetic field applied to the first ferromagnetic layer by exchange coupling through the free layer anti-parallel coupling layer is larger than a bias field applied from the bias layer to an end of the first ferromagnetic layer in the track width direction.
4. The magnetic head as described in claim 3 , wherein
nonmagnetic material is provided between the second ferromagnetic layer,
the bias layer, the free layer anti parallel coupling layer comprises Ru with a film thickness between 0.70 nm and 0.85 nm, and
when the first ferromagnetic layer's film thickness is expressed by t f (nm) and ratio of the bias layer's film thickness and the nonmagnetic material's thickness (bias layer film thickness/nonmagnetic material thickness) is expressed by t r , t r is 0.5 or more and 100 or less and t r and t f satisfy the following relationship:
t f <3.9× t r −0.38 .
5. A magnetic head characterized by comprising:
a ferromagnetic pinned layer;
a ferromagnetic free layer;
a nonmagnetic interlayer provided between the ferromagnetic pinned layer and the ferromagnetic free layer;
bias layers provided at both sides of the ferromagnetic free layer in a track width direction;
wherein
the ferromagnetic free layer has a synthetic ferri free structure in which a first ferromagnetic layer and a second ferromagnetic layer larger in product of magnetization and film thickness than the first ferromagnetic layer are magnetically anti-parallelly coupled through a free layer anti-parallel coupling layer; and
a magnetic field applied to the first ferromagnetic layer by exchange coupling through the free layer anti-parallel coupling layer is larger than sum of bias field applied from the bias layer to an end of the first ferromagnetic layer in the track width direction and track width direction component of shape magnetic anisotropy field of the first ferromagnetic layer.
6. The magnetic head as described in claim 5 , characterized by having a CPP structure in which sense current is applied in a thin film thickness direction.
7. The magnetic head as described in claim 5 , characterized in that the upper surface of the bias layers at ends thereof adjacent the ferromagnetic free layer are higher in the film thickness direction than the upper surface of the ferromagnetic free layer.
8. The magnetic head as described in claim 5 , wherein
nonmagnetic material is provided between the second ferromagnetic layer,
the bias layer, the free layer anti-parallel coupling layer comprises Ru with a film thickness between 0.70 nm and 0.85 nm, and
when the first ferromagnetic layer's film thickness is expressed by t f (nm) and ratio of the bias layer's film thickness and the nonmagnetic material's thickness (bias layer film thickness/nonmagnetic material thickness is expressed by t r , t r is 0.5 or more and 100 or less and t r and t f satisfy the following relationship:
t f <3.9× t r −0.38 .
9. A magnetic head characterized by comprising:
a ferromagnetic pinned layer;
a ferromagnetic free layer;
a nonmagnetic interlayer provided between the ferromagnetic pinned layer and the ferromagnetic free layer;
bias layers provided at both sides of the ferromagnetic free layer in a track width direction;
wherein
the ferromagnetic free layer has a synthetic ferri free structure in which a first ferromagnetic layer and a second ferromagnetic layer larger in product of magnetization and film thickness than the first ferromagnetic layer are magnetically anti-parallelly coupled through a free layer anti-parallel coupling layer;
a magnetic field applied to the first ferromagnetic layer by exchange coupling through the free layer anti-parallel coupling layer is larger than a bias field applied from the bias layer to an end of the first ferromagnetic layer in the track width direction; and
nonmagnetic material is provided between the second ferromagnetic layer and the bias layer.
10. The magnetic head as described in claim 9 , characterized in that the center of an end of the bias layer adjacent to the ferromagnetic free layer is nearer to the second ferromagnetic layer than to the first ferromagnetic layer.
11. The magnetic head as described in claim 9 , characterized in that the free layer anti-parallel coupling layer is made of Ru with a film thickness between 0.70 nm and 0.85 nm and when the first ferromagnetic layer's film thickness is expressed by t f (nm) and ratio of the bias layer's film thickness and the nonmagnetic material's thickness (bias layer film thickness/nonmagnetic material thickness) is expressed by t r , t r is 0.5 or more and 100 or less and t r and t f satisfy the following relation:
t f <3.9× t r −0.38 .
12. The magnetic head as described in claim 9 , characterized in that the free layer anti-parallel coupling layer is made of Ru with a film thickness between 0.70 nm and 0.85 nm and the first ferromagnetic layer's film thickness is 0.5 nm or more and 1.5 nm or less and ratio of the bias layer's film thickness and the nonmagnetic material's thickness (bias layer film thickness/nonmagnetic material thickness) is 0.5 or more and 15 or less.
13. The magnetic head as described in claim 9 , characterized in that the free layer anti-parallel coupling layer is made of Ru with a film thickness between 0.70 nm and 0.85 nm and the first ferromagnetic layer's film thickness is 1.5 nm or more and 2.5 nm or less and ratio of the bias layer's film thickness and the nonmagnetic material's thickness (bias layer film thickness/nonmagnetic material thickness) is 0.5 or more and 3.5 or less.
14. The magnetic head as described in claim 9 , characterized in that the free layer anti-parallel coupling layer is made of Ru with a film thickness between 0.70 nm and 0.85 nm and the first ferromagnetic layer's film thickness is 2.5 nm or more and 3.5 nm or less and ratio of the bias layer's film thickness and the nonmagnetic material's thickness (bias layer film thickness/nonmagnetic material thickness) is 0.5 or more and 1.2 or less.
15. The magnetic head as described in claim 9 , characterized in that the free layer anti-parallel coupling layer is made of Ru with a film thickness between 0.35 nm and 0.45 nm and when the first ferromagnetic layer's film thickness is expressed by t f (nm) and ratio of the bias layer's film thickness and the nonmagnetic material's thickness (bias layer film thickness/nonmagnetic material thickness) is expressed by t r , t r is 0.5 or more and 100 or less and t r and t f satisfy the following relation:
t f <8.6× t r −0.38 .
16. The magnetic head as described in claim 9 , characterized in that the free layer anti-parallel coupling layer is made of Ru with a film thickness between 0.35 nm and 0.45 nm and the first ferromagnetic layer's film thickness is 3.0 nm or more and 4.0 nm or less and ratio of the bias layer's film thickness and the nonmagnetic material's thickness (bias layer film thickness/nonmagnetic material thickness) is 0.5 or more and 6 or less.
17. The magnetic head as described in claim 9 , characterized in that the free layer anti-parallel coupling layer is made of Ru with a film thickness between 0.35 nm and 0.45 nm and the first ferromagnetic layer's film thickness is 1.5 nrn or more and 3.0 nm or less and ratio of the bias layer's film thickness and the nonmagnetic material's thickness (bias layer film thickness/nonmagnetic material thickness) is 0.5 or more and 20 or less.
18. The magnetic head as described in claim 9 , characterized in that the free layer anti-parallel coupling layer is made of Ru with a film thickness between 0.35 nm and 0.45 nm and the first ferromagnetic layer's film thickness is 0.5 nm or more and 1.5 nm or less and ratio of the bias layer's film thickness and the nonmagnetic material's thickness (bias layer film thickness/nonmagnetic material thickness) is 0.5 or more and 100 or less.
19. The magnetic head as described in claim 9 , characterized being a CPP structure in which sense current is applied in a thin film thickness direction.
20. The magnetic head as described in claim 9 , characterized in that the upper surface of the bias layers at ends thereof adjacent the ferromagnetic free layer are higher in the film thickness direction than the upper surface of the ferromagnetic free layer.