Thermal head driving IC and method of controlling the same
View Patent ↗A thermal head driving IC for supplying voltage to a plurality of heating resistors each controlled by a driving MOS transistor includes a switch for making and breaking electrically between a substrate and a source of the plurality of driving MOS transistors. In a case where the plurality of heating resistors are activated, the plurality of driving MOS transistors are turned on and the switch is turned off, whereby the substrate potential is floated. As a result, the substrate potential is forward-biased against the source by a substrate current generated in a high-electric-field depletion region near the drain, and a parasitic bipolar transistor turns on, whereby both the plurality of driving MOS transistors and the parasitic bipolar transistor turn on. In a case where the plurality of heating resistors are not activated, a signal for turning off the plurality of driving NMOS transistors is given, and the switch is turned on.
1. A thermal head driving IC for supplying voltage to a plurality of heating resistors, comprising:
a plurality of driving MOS transistors each connected to one of the heating resistors; and
a plurality of switches connected to respective ones of the driving MOS transistors for making and breaking electrically between a substrate and a source of the respective driving MOS transistors,
wherein in a case where selected heating resistors are activated, a signal to the corresponding driving MOS transistors is given to turn them on, and the switch connected to each of the turned-on driving MOS transistors is turned off, and
wherein in a case where selected heating resistors are not activated, a signal to the corresponding driving MOS transistors is given to turn them off, and the switch connected to each of the turned-off driving MOS transistors is turned on.
2. A method of controlling a thermal head driving IC for supplying voltage to a plurality of heating resistors, comprising:
providing a plurality of driving MOS transistors connected to respective ones of the heating resistors;
providing a plurality of switches connected to respective ones of the driving MOS transistors for making and breaking electrically between a substrate and a source of the respective driving MOS transistors;
giving a first signal to selected driving MOS transistors to turn on the selected driving MOS transistors;
turning off the switch connected to each of the selected driving MOS transistors;
giving a second signal to non-selected driving MOS transistors to turn off the non-selected driving MOS transistors; and
turning on the switch connected to each of the non-selected driving MOS transistors.